Double-sided heat dissipation full-bridge power module based on GaN device

Abstract

The invention discloses a double-sided heat dissipation full-bridge power module based on a GaN device, which is characterized in that a double-sided ceramic substrate dissipates heat to form a full-bridge circuit, and the full-bridge circuit is composed of two half-bridge circuits; each half-bridge circuit comprises two GaN tube cores and a power bus driving capacitor Cbus; wherein one end of thepower bus driving capacitor Cbus is connected with Vbus, the other end of the power bus driving capacitor Cbus is connected with GND, the two GaN tube cores are respectively connected with the corresponding driving chips, and each driving chip is provided with a driving bus decoupling capacitor Cdri. The structure is compact and light, and the power density can be effectively improved; the heat dissipation performance of the GaN power module can be greatly improved, and meanwhile parasitic inductance in the GaN full-bridge power module is reduced.

Description

technical field [0001] The invention belongs to the technical field of power electronic power module design, and in particular relates to a GaN device-based double-sided heat dissipation full-bridge power module. Background technique [0002] With the development of science and technology, the performance of traditional silicon-based (Si) power devices has gradually reached its theoretical upper limit, which is increasingly unable to meet the application requirements of power converters. Wide bandgap semiconductor gallium nitride (GaN) power devices have the characteristics of low on-resistance, low parasitic capacitance, and high switching speed, which can effectively improve the efficiency and operating frequency of power converters, significantly reduce the volume of power converters, and increase power Density, in line with the development needs of power converters for high efficiency, light weight, high power density, etc., has a wide range of application prospects. ...

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Problems solved by technology

[0005] 1. Single-sided PCB method. This method can effectively reduce the key parasitic parameters in the circuit by optimizing the circuit layout. However, due to the extremely low thermal conductivity of the PCB insulating material, the heat dissipation problem of GaN becomes more serious;

[0006] 2. The single-sided DBC ceramic substrate method, which uses the good heat dissipation performance of the ceramic substrate as a heat dissipation path, can effectively improve the heat dissipation performance, but only includes one heat dissipation path, and the GaN device used includes the thermal resistance of the package, and the heat dissipation performance is affected by the heat dissipation of the package. Resistance is limited, and at the same time, due to the poor wiring accuracy of the DBC ceramic substrate, the parasitic parameters in the circuit increase;

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