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Method of increasing interface adhesireness using electron beam manufacturing process

An electron beam and adhesion technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of unfavorable component reliability improvement, dielectric layer metal layer damage, etc., to prevent peeling and avoid being damaged Damage, the effect of ensuring quality

Active Publication Date: 2006-09-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, these treatments are easy to cause damage to the dielectric layer or metal layer, which is also not conducive to the improvement of component reliability

Method used

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  • Method of increasing interface adhesireness using electron beam manufacturing process
  • Method of increasing interface adhesireness using electron beam manufacturing process
  • Method of increasing interface adhesireness using electron beam manufacturing process

Examples

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Embodiment Construction

[0029] For a better understanding, here are a few specific examples:

[0030] The following fit Figure 1 to Figure 2a and Figure 2b The method for increasing the interface adhesion by using the electron beam process according to the first embodiment of the present invention is described. First, please refer to figure 1 , providing a substrate 100, such as a semiconductor substrate such as a silicon substrate or a gallium arsenide substrate. Next, an insulating layer 102 is formed on the substrate 100 by conventional deposition techniques, such as chemical vapor deposition (CVD) or spin coating. In this embodiment, the insulating layer 102 may be a silicon nitride layer as an etch stop layer, a silicon oxynitride layer or a silicon oxide layer as a dielectric anti-reflection layer (DARC), or an intermetallic dielectric layer ( interlayer dielectric (IMD) dielectric material or low dielectric material, where the dielectric material can be an oxide layer (TEOS oxide) formed...

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Abstract

A method for increasing the interface adhesion by use of electron beam process includes generating the first and the second insulating layers on substrate, performing the first electron beam process to the interface between two insulating layers, generating the third insulating layer on the second one, and performing the second electron beam process to the interface between the two insulating layers. Another method is also disclosed.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, and in particular to a method for increasing interface adhesion by using an electron beam manufacturing process, so as to prevent damage between dielectric layers in a chemical mechanical polishing (CMP) or packaging manufacturing process (packaging). Occasionally, the peeling phenomenon occurs between the dielectric layer and the metal layer. Background technique [0002] The manufacturing process of semiconductor integrated circuits is to shrink and manufacture various electronic components and circuits required for a specific circuit on a small area substrate. Wherein, each component must be electrically connected through appropriate metal interconnects. The metal layer formed on the outermost side is then connected to the corresponding pins of the lead frame with metal wires by a bonder to serve as an interface between the internal circuit and the external signal pins. . [...

Claims

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Application Information

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IPC IPC(8): H01L21/3105H01L21/326
Inventor 包天一章勋明
Owner TAIWAN SEMICON MFG CO LTD