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Preparation of high-purity nanometer silicon dioxide

A high-purity silica and nanotechnology, applied in the direction of silica, silicon oxide, etc., to achieve the effect of fine aggregate particles, reduced heat loss, and good particle dispersion

Inactive Publication Date: 2006-10-25
优美特(北京)环境材料科技股份公司
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Problems solved by technology

[0016] The purpose of the present invention is to overcome the defects in the preparation of nano-silica in the above-mentioned prior art, thereby providing a simple process flow, the product powder is not easy to agglomerate, the dispersion is good, and the size, distribution and shape of the product particles are controllable. And the production volume is large, the preparation method of nanometer high-purity silica that will not bring environmental problems

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  • Preparation of high-purity nanometer silicon dioxide

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Embodiment 1

[0061] like figure 1 As shown in the process flow chart, in the plasma gas phase including plasma generator (high-frequency plasma power supply and plasma torch), plasma chemical reactor, scar removal device, cooling system, collection system and powder processing system, etc. The nanometer high-purity silicon dioxide of the present invention is prepared in an oxidation reaction device. Among them, the high-frequency plasma power supply has a power of 30KW and a frequency of 4MHz. The diameter of the plasma torch is Φ60, the diameter of the central tube is Φ50, and the length of the torch is 300mm. Furnace tube, high-pressure air blowing plate (scar removal device), quenching air blowing plate, the total length of the reactor (composed of three sections, each 250mm long) is 750mm, the inner diameter of the reactor is Φ111, and the high-pressure air blowing plate is in each section The reactors are connected (air hole diameter 2mm, air pressure ≥ 5Kg, tangential injection), an...

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Abstract

The invention relates to a method for preparing nanometer high-purity silicon dioxide, which is to prepare nanometer SiO by plasma gas phase method in a high-frequency plasma gas phase oxidation reaction device 2 , including: purifying air or oxygen and sending it to a high-frequency plasma generator to generate plasma oxygen under the conditions of oscillating power of 30KW and frequency of 3-4MHz; SiCl 4 After being gasified at a temperature of 200-300°C, it is sent to a plasma chemical reactor and reacted with oxygen plasma at a temperature of 1200-1800°C. The reactant stays in the reactor for 0.15-1 second, and the scar is removed by a scar removal device. , into the SiCl 4 The molar ratio with oxygen is 1:1.2~2; finally pass dry air or N 2 Gas, quench the silica crystal nucleus to below 300°C, collect the powder, remove chlorine, and obtain the nanometer high-purity silica of the present invention. The process of the method is simple, the product powder is not easy to agglomerate, the dispersion degree is good, the size, distribution and shape of the product particles are controllable, and the production volume is large, and no environmental problems are caused.

Description

technical field [0001] The invention relates to a method for preparing nanometer high-purity silicon dioxide, in particular to a method for preparing nanometer high-purity silicon dioxide by using a plasma method. Background technique [0002] Nano silica powder plays an irreplaceable role in many scientific research and industrial fields. It has special properties such as small particle size, large specific surface area, strong surface adsorption capacity, and large surface energy. Nano silica powder can improve the inherent physical and chemical properties of materials and products. Due to its high whiteness, high purity, high temperature resistance, and non-combustibility, its molecular structure is similar to that of silicone rubber. It is generally used as a reinforcing agent for silicone rubber. It can also be used for the modification of resin-based composite materials, additives for new plastics, plexiglass, coatings, paper and other products, and can also be used a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/113C01B33/18
Inventor 马兵陈运法张建森
Owner 优美特(北京)环境材料科技股份公司
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