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Semiconductor laser device and manufacturing method thereof

A technology for laser devices and manufacturing methods, which is applied to semiconductor lasers, laser components, lasers, etc., and can solve problems such as reducing the maximum light output and reliability degradation

Inactive Publication Date: 2006-11-15
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] Consequently, COD tends to occur in the active layer region close to the resonator facets, resulting in reduced maximum light output during high output drive and degradation of long-term reliability

Method used

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  • Semiconductor laser device and manufacturing method thereof
  • Semiconductor laser device and manufacturing method thereof
  • Semiconductor laser device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
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no. 1 example

[0080] FIG. 1 is an explanatory diagram showing the structure of a semiconductor laser device according to a first embodiment of the present invention. In FIG. 1, FIG. 1(a) shows a perspective view including the light exit end face, and FIG. 1(b) shows the waveguide path in the layer thickness direction taken from the line Ia-Ia' of FIG. 1(a). The cross-sectional view, and Fig. 1(c) shows a cross-sectional view in the layer thickness direction, taken along the line Ib-Ib' of Fig. 1(a)*. Reference numeral 101 is an n-type GaAs substrate, 102 is an n-type GayInzP buffer layer (where y and z are each set from not less than 0 to not more than 1; this description is omitted hereinafter), and 103 is an n-type Al x Ga y In z P first covering layer (x, y and z are respectively set from not less than 0 to not more than 1; hereinafter, this description is omitted), 104 is an active layer (MQW active layer), and in this layer, alternately The double quantum well structure formed by th...

no. 2 example

[0119] With respect to the semiconductor laser device of the present invention described in the first embodiment, this embodiment discusses the concentration of As atoms and the wavelength in the window region relative to the second conductivity type as the second conductivity type in the region near the end facet of the laser resonator. p-type Al x Ga y In z P The relationship between the bit weight of the wavelength in the active region in the second cladding layer 105 .

[0120] In the manufacturing method described in the first embodiment, the irradiation amount (dose) of ionized As atoms is changed so that the p-type Al as the second cladding layer of the second conductivity type in the region near the end face of the laser resonator x Ga y In z The concentration of As atoms in the P second cladding layer 105 is set to 1×10 17 cm -3 , 5×10 17 cm -3 , 1×10 18 cm -3 , 5×10 18 cm -3 , 1×10 19 cm -3 , 5×10 19 cm -3 , 1×10 20 cm -3 , 5×10 20 cm -3 and 1×10 ...

no. 3 example

[0132] With respect to the semiconductor laser device of the present invention described in the first embodiment, this embodiment discusses the p-type Al contained in the second cladding layer as the second conductivity type x Ga y In z P second cladding layer 105 and p-type Al x Ga y In z P in the third cladding layer 107 has a concentration of impurity atoms (Be atoms) having the second conductivity.

[0133] In the manufacturing method described in the first embodiment, on seven n-type GaAs substrates 101, the respective thin layers 102 to 108 are successively formed by epitaxial growth by the MBE method, so that seven values ​​of 5.0×10 17 cm -3 , 7.5×10 17 cm -3 , 1×10 18 cm -3 , 2.5×10 18 cm -3 , 5×10 18 cm -3 , 7.5×10 18 cm -3 , and 1×10 19 cm -3 Each value in is set to p-type Al as the second capping layer of the second conductivity type x Ga y In z P second cladding layer 105 and p-type Al x Ga y In z P is the concentration of impurity atoms (Be...

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Abstract

A semiconductor laser device made of AlGaInP-based materials, comprising: a first cladding layer of a first conductivity type formed on a semiconductor substrate, an active layer and a second cladding layer of a second conductivity type , wherein a part of the active layer in a region close to an end face of the laser resonator has a peak wavelength in photoluminescence smaller than that in a part of the active layer in a region inside the laser resonator peak wavelength, and the second cladding layer of the second conductivity type in the region close to the end face of the laser resonator contains As atoms, and a manufacturing method of the semiconductor laser device.

Description

technical field [0001] The present invention relates to a semiconductor laser device for optical discs and its manufacturing method, more precisely, to a window-structured semiconductor laser device with excellent high output operating characteristics and its manufacturing method. Background technique [0002] In recent years, various types of semiconductor lasers have been widely used as light sources for optical disc devices. In particular, high-output semiconductor lasers have been used as writing light sources for optical disks in DVD players, DVD-RAM drives, etc., and there is a strong demand for higher-output semiconductor devices. [0003] One of the factors limiting the development of higher output semiconductor lasers is the catastrophic optical damage (COD) that occurs in an active thin layer region near the facets of the laser resonator in response to an increase in light output density. . [0004] The reason for COD is that the active thin layer region near the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/16H01S5/00H01S5/22H01S5/223H01S5/30H01S5/32H01S5/343
CPCB82Y20/00H01S5/162H01S5/168H01S5/2206H01S5/2231H01S5/305H01S5/3054H01S5/3213H01S5/34326H01S5/3436
Inventor 大久保伸洋国政文枝
Owner SHARP KK