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Copper electroplating film method

A technology of copper electroplating and thin film, which is applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., to achieve the effects of improving wetting ability, shortening production cycle, and eliminating defects

Inactive Publication Date: 2007-04-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is not feasible to apply this spontaneous annealing method of PVD Cu seed layer in any practical production environment

Method used

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  • Copper electroplating film method
  • Copper electroplating film method
  • Copper electroplating film method

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Experimental program
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Embodiment Construction

[0017] Next, we will describe in detail the method for surface treatment of the PVD Cu seed layer proposed by the present invention.

[0018] The main principle of the present invention is to add a "copper seed layer surface treatment" process between the two processes of PVD and ECP as shown in Figure 2 on the basis of the traditional method for preparing Cu electroplating film, so that the copper seed crystal Layer surface is reconstructed, and forms more stable oxide film layer, to reduce the surface tension between copper seed crystal layer surface and the electroplating chemical reagent in the next step; Specifically see the preparation Cu electroplating that the present invention of Fig. 3 proposes Flowchart of the thin film process.

[0019] In order to obtain the copper surface undergoing structural recombination or / and oxidation on several atomic layers according to the present invention, the "copper seed layer surface treatment" in Fig. 3 can be accomplished through ...

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Abstract

A process for electroplating Cu film used as wires on semiconductor includes such steps as depositing copper seed crystal layer on barrier layer, treating its surface through flushing with gas and annealing, or flushing with worm water, and electrochemical plating for growing Cu film.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a copper electroplating film method capable of performing surface treatment on a copper seed layer. technical background [0002] In the semiconductor copper (Cu) wiring process, in order to electroplate the copper film, it is first necessary to deposit a thin copper seed layer on the barrier layer, and then use the electrochemical plating (ECP) method on the Cu seed layer. A Cu thin film layer was grown. [0003] Figure 1 is a schematic diagram of the structure of the barrier layer, copper (Cu) seed layer and Cu electroplating film on the semiconductor wafer; of course, in actual production, the semiconductor wafer often contains thousands of components or multiple layers Structure, the present invention has only given an example with a via hole for illustrating the problem. As shown in FIG. 1, there is a via hole 110 on the silicon oxide layer 100 of the s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D7/12H01L21/288H01L21/445
Inventor 张开军职春星徐根保
Owner SEMICON MFG INT (SHANGHAI) CORP