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Structure of metallic oxide semiconductor transistor with side diffusion and producing method thereof

A technology for oxidizing semiconductors and a manufacturing method, which is applied in the manufacturing of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of offset of the gate layer 24, cannot accurately control the width A of the overlapping region, and affects the relationship between the gate layer 24 and the gate layer 24. P-type body 20 alignment and other issues

Inactive Publication Date: 2007-04-18
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the conditions of the photolithography process will cause the gate layer 24 to shift, thereby affecting the alignment between the gate layer 24 and the P-type body 20, and the width A of the overlapping region cannot be precisely controlled.

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  • Structure of metallic oxide semiconductor transistor with side diffusion and producing method thereof
  • Structure of metallic oxide semiconductor transistor with side diffusion and producing method thereof
  • Structure of metallic oxide semiconductor transistor with side diffusion and producing method thereof

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Embodiment Construction

[0031] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is specifically cited below, and in conjunction with the attached drawings, the detailed description is as follows:

[0032] FIG. 3 shows a schematic cross-sectional view of the structure of the LDMOS transistor of the present invention, and FIG. 4 shows a top view of the layout of the gate layer and the P-type body of the LDMOS transistor of the present invention.

[0033] Taking the high-voltage component region of a P-type semiconductor silicon substrate 30 as an example, the surface includes an N-type silicon layer 32 , which can be an N-type epitaxial layer or an N-type well layer. The inside of the N-type silicon layer 32 includes a first and a second shallow trench isolation region 34I, 34II for isolating the device structure in the high voltage device region. 1st, 2nd N + The source regions 36I, 36II are formed in the N-typ...

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Abstract

A structure of metal oxide semiconductor transistor having lateral surface expand, comprising a horseshoe-shaped gate layer that consists of a first straight forward extending area, a second straight forward extending area and a lateral extending area. The first source electrode area is formed around left side wall of first straight forward extending area in this gate layer, the second source electrode area is formed around right side wall of second straight forward extending area in this gate layer, a drain electrode is formed in the gap between the first and second straight forward extending areas. The first P type body is surround the side wall and bottom of first source electrode area, the second P type body is surround side wall and bottom of this second source electrode area. Particularly, the first overlap area is formed at the first straight forward extending area and periphery of first P type body in this gate layer, and the second overlap area is formed at the second straight forward extending area and periphery of second P type body.

Description

technical field [0001] The present invention relates to a high-voltage operation power component, in particular to a structure of a gate layer and a P-type body of a side diffused metal oxide semiconductor (LDMOS) transistor and a manufacturing method thereof. Background technique [0002] In today's semiconductor technology, in order to achieve the operation of a single-chip system, the controller, memory, low-voltage operating circuits, and high-voltage operating power components are highly integrated on a single chip, and the research and development of power components Including vertical power metal oxide semiconductor (VDMOS) transistors, insulated gate bipolar transistors (IGBT), side diffused metal oxide semiconductor (LDMOS) transistors, etc., the purpose of its research and development is to improve power conversion efficiency and reduce energy loss . In particular, the LDMOS transistor can be applied to a high-voltage CMOS compatible process, so it has become a re...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336
Inventor 杨家伟张大鹏廖志成
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION