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Method for manufacturing semiconductor element with metal gate

A manufacturing method and metal gate technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reduced component performance, increased gate dielectric layer thickness, and component drive capability degradation, to ensure The effect of electrical performance

Active Publication Date: 2017-06-06
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, polysilicon, the traditional gate material, faces problems such as boron penetration (boron penetration), which leads to lower device performance; and the polysilicon gate also suffers from the unavoidable depletion effect, making the equivalent gate dielectric Difficulties such as layer thickness increase and gate capacitance decrease lead to degradation of device drive capability

Method used

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  • Method for manufacturing semiconductor element with metal gate
  • Method for manufacturing semiconductor element with metal gate
  • Method for manufacturing semiconductor element with metal gate

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Embodiment Construction

[0036] see Figure 1 to Figure 5 , Figure 1 to Figure 5 It is a schematic diagram of a first preferred embodiment of the method for manufacturing a semiconductor element with a metal gate provided by the present invention. Such as figure 1 As shown, the preferred embodiment firstly provides a substrate 100 , such as a silicon substrate, a silicon-containing substrate, or a silicon-on-insulator (SOI) substrate. A first semiconductor element 110 and a second semiconductor element 112 are formed on the substrate 100, and shallow trench isolation (shallow trench isolation, which provides electrical isolation) is formed in the substrate 100 between the first semiconductor element 110 and the second semiconductor element 112 STI) 102. The first semiconductor element 110 has a first conductivity type, and the second semiconductor element 112 has a second conductivity type, and the first conductivity type is complementary to the second conductivity type. In this preferred embodime...

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Abstract

The invention discloses a method for manufacturing a semiconductor element with a metal gate. The manufacturing method first provides a substrate, and at least one first semiconductor element is formed on the substrate. Next, a first gate trench is formed in the first semiconductor device, and then a first work function metal layer is formed in the first gate trench. After the first work function metal layer is formed in the first gate trench, a decoupled plasma oxidation process is performed on the first work function metal layer.

Description

technical field [0001] The invention relates to a semiconductor element with a metal gate and a manufacturing method thereof, in particular to a semiconductor element with a metal gate implementing a gate last process and a manufacturing method thereof. Background technique [0002] As the size of semiconductor devices continues to shrink, the traditional method of reducing the gate dielectric layer, such as reducing the thickness of the silicon dioxide layer, to achieve the purpose of optimization, is facing problems caused by the tunneling effect of electrons. Physical limitation of excessive leakage current. In order to effectively extend the generation evolution of logic elements, high dielectric constant (high-k) materials can effectively reduce the physical limit thickness, and at the same equivalent oxide thickness (equivalent oxide thickness, EOT) , effectively reduce the leakage current and achieve equivalent capacitance to control channel switching, etc., and are ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/8238
Inventor 王俞仁孙德霖赖思豪陈柏均林志勋蔡哲男林君玲叶秋显
Owner UNITED MICROELECTRONICS CORP