Detecting method and structure for microstructure binding process

Abstract

The present invention relates to detection method and detection structure for micro structure bonding process result. The detection method includes first designing silicon structure pattern; preparing micro structure with silicon structure bonded with silicon substrate or glass substrate via bonding technological process, with the silicon structure having at least one end separated from the bonding surface and the bonding area being recorded; pushing the silicon structure on the no-bonding end with micro probe to make the silicon structure deform until the monocrystal silicon chip breaks from the bonding surface and recording the distance between the probe pushed point and the bonding surface, deformation and the breaking process parameters; and calculating the bonding strength based on the recorded data. The present invention completes MEMS device detection in a simple process.

Description

Technical field: [0001] The invention relates to the technical field of micro-electro-mechanical system (MEMS) processing technology, in particular to a detection method for microstructure bonding process results and a detection structure used in the method. Background technique: [0002] As an interdisciplinary and advanced manufacturing technology that originated in the 1990s, MEMS has played an important role in improving people's quality of life, improving people's living standards and enhancing national strength. Due to the strong interdisciplinary features, MEMS research methods and processing technologies are inherently diverse. Among many processing technologies, silicon technology is gradually becoming the mainstream of MEMS technology. Bonding, as a key technology in silicon technology, has been adopted more and more in recent years. [0003] "Bulk silicon MEMS device integration method" (CN1431699) discloses a bulk silicon MEMS device integration method, and its ...

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