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Producing method for liquid-crystal displaying device

A technology of thin film transistor and conductive type, which is applied in the field of low-temperature polysilicon liquid crystal display process, and can solve the problems of large drain leakage current and so on

Inactive Publication Date: 2007-07-04
TPO DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Of course, the polysilicon type TFT-LCD is not without disadvantages, for example, when the TFT is switched to the off state, there is often still a large drain leakage current

Method used

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  • Producing method for liquid-crystal displaying device
  • Producing method for liquid-crystal displaying device
  • Producing method for liquid-crystal displaying device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0071] Please refer to the cross-sectional schematic diagram shown in Figure 2A. The forming steps are as follows: firstly, an amorphous silicon layer 103 is formed on a transparent substrate 100 . Next, crystallize the amorphous silicon layer 103 with a laser beam, and then deposit an n+ conductive impurity-doped polysilicon layer 110 (hereinafter referred to as the n+ polysilicon layer 110 ) on the amorphous silicon layer 103 . Finally, a metal layer 115 is deposited on the n+ polysilicon layer 110 . In the step, after the amorphous silicon layer 103 is deposited to a predetermined thickness, the n+ impurities are synchronously doped to form a surface-doped amorphous silicon layer 110, and then, the laser beam is used to The amorphous silicon layers 103 and 110 are crystallized to form an n+ polysilicon layer 110 and an undoped polysilicon layer 103 respectively, and then a metal layer 115 is deposited.

[0072] Still referring to FIG. 2A , then, the metal layer 115 is pat...

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Abstract

The method includes forming a free doping silicon layer, n type silicon layer and a method layer in sequence on base plate, defining source / draw electrode of n type TFT and picture TFT as well as storage capacity bottom electrode by patternization, forming gate electrode oxide layer and metal layer to form n type and p type TFT gate electrode, source and picture element FTF gate electrode as well as picture element capacity by patternization, forming P type TFT source / draw electrode by planting P type impurities and to activate the impurities after photoresist pattern removed, forming a photosensitive resin protection layer with contact hole on all surfaces, forming ITO layer, forming transparent connecting wire and top electrode of picture element capacity by patternization.

Description

technical field [0001] The present invention is related to a liquid crystal display process technology, in particular to a low-temperature polysilicon liquid crystal display process technology to complete the production of driving circuits and liquid crystal display pixels with the most streamlined number of masks. Background of the invention [0002] Liquid crystal display (LCD) is a flat display with low power consumption, and because it is much smaller in terms of space and quality than a cathode ray tube (CRT) with the same window size, and There will be no curved surface like a normal CRT. Therefore, it has been widely used in various products, including consumer electronics such as palmtop computers, computer dictionaries, watches, mobile phones, larger portable computers, communication terminals, display panels, personal desktop computers, and even high-resolution It is not difficult to see its traces and its popularity, such as HDTV. Especially the active matrix th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1368G03F7/00H01L29/786H01L21/34G02F1/136H01L21/428
Inventor 陈信铭
Owner TPO DISPLAY