Measuring device and method for half-wave voltage and optical uniformity of electro-optical crystal material

A technology of optical uniformity and half-wave voltage, which is used in the measurement of dynamic extinction ratio and half-wave voltage, and the field of static extinction ratio. Compared with problems such as half-wave voltage, it achieves the effect of easy to operate measurement method, reliable measurement device and reliable results.

Inactive Publication Date: 2003-01-08
SHANDONG UNIV
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the light passes through the crystal once, the influence of the rotation angle of the polarization plane due to optical rotation on the half-wave voltage and optical uniformity parameters cannot be eliminated
Therefore, it cannot be used to measure the static extinction ratio, dynamic extinction ratio and half-wave voltage of optically active electro-optic crystals.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measuring device and method for half-wave voltage and optical uniformity of electro-optical crystal material
  • Measuring device and method for half-wave voltage and optical uniformity of electro-optical crystal material
  • Measuring device and method for half-wave voltage and optical uniformity of electro-optical crystal material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The structure of the measuring device is as image 3 shown. It includes a helium-neon laser 6 , a polarizer 7 , a polarizer 8 , a photodiode 9 , a galvanometer 10 , and a high-voltage power supply 11 . According to the light path direction, a beam splitter 12 is set at an angle of 135° with the incident light angle after the polarizer 7. After the beam splitter, the crystal to be measured is placed, followed by a total reflection mirror 5 perpendicular to the optical path. In the beam splitter 12 Directly below is the polarizer 7, the photodiode 9 is electrically connected to the galvanometer 10, the silver electrodes on the upper and lower surfaces of the electro-optic crystal C are also electrically connected to the high-voltage power supply 11, and the other components are optically connected.

[0021] The measurement method is to place an optically active electro-optic crystal La 3 Ga 5 SiO 14 The crystal (LGS) is horizontally placed at the position of the measu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention relates to a measurement device and method of photoelectric crystal material half wave voltage and optical homogeneity, which comprises He-N3 laser, polarizer plate beam splitter, total reflector, analyzer, photodiode, galvana meter, and DC high voltage power source, with indluded angle of 45 deg. or 135 deg. between plate beam splitter and incident angle. The tested crystal with electrode coated with silver on and under surface is put on the plate beam splitter to switch on the laser to tune the analizer and polarizer to cross or parallel before adding voltage to the crystal and the tested light intensity signals are I1, I2, I2 / I1 is the static extinction ratio and voltage is enlarged to turn the light intensity signal of galvanameter to the largest, the added voltage on the crystal is the half-wave voltage and the light intensity signal is I3, I3 / I1 the dynamic extinction ratio.

Description

(1) Technical field [0001] The invention relates to a measuring device and method for half-wave voltage and optical uniformity of electro-optic crystal materials, in particular to the measurement of the static extinction ratio, dynamic extinction ratio and half-wave voltage of an electro-optic crystal with optical activity. (2) Background technology [0002] Static extinction ratio, dynamic extinction ratio and half-wave voltage are some of the most basic and important parameters to characterize electro-optic crystal materials. Currently used electro-optic crystal materials are optically inactive, such as LiNbO 3 and DKDP et al. Recently, we have taken the lead in studying the optically active La 3 Ga 5 SiO 14 Crystal (referred to as LGS) half-wave voltage and optical uniformity, and has made it into an electro-optical Q switch. [0003] The so-called optical rotation means that after the monochromatic plane polarized light passes through the crystal along the optical a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01J4/00G01N21/21
Inventor 尹鑫王继扬张少军蒋民华
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap