Manufacture of semiconductor ceramic capacitor with crystal interface layer

Abstract

The grain boundary layer semiconductor ceramic capacitor is made according to following method. (1) The materials of procelain includes of SrCO3 of 0.95-1.05 mol, TiO2 of 0.95-1.05 mol, Nb2O5 of 0.001-0.01 mol. (2) Ball milling to granularity less than 1 micro. (3) Burning at 1150-1250 deg.C. (4) MnCo3 of 0.001-0.01 mol and fluxing agent of 0.5-5 wt% Pbo etc. are added to the burnt fine material. (5) Ball milling to granualrity less than 1 micro. (6) The solution of polyvinyl alcohol is mixed to milled porcelain powder, then rolled to the formed film (7) Punched to pieces. (8) Bath drop. (9) Under 1210-1260 deg.C and in the flowing gas of mixed H2 and N2, the semi-manufactured goods are carry out of the reduced reduce sntering for four hours, then at 950-1100 deg.C processed in air for 30-60 minutes. (10) The silver electrode is prepared.

Description

Technical field: [0001] The utility model relates to the technical field of electronic components, in particular to a method for manufacturing a grain boundary layer semiconductor ceramic capacitor. Background technique: [0002] So far, there have been reports at home and abroad about grain boundary layer capacitor ceramics and semiconductor insulation using two firings, that is, the first step is in the H 2 with N 2 The semiconductor is fired in the mixed gas at a temperature of 1420°C and held for 4 hours; the second step is to coat the oxide slurry on the surface of the semiconductorized ceramic chip, and burn and oxidize at 1050°C. The process is complicated and not suitable for industrialization. Domestic Tsinghua University has already applied for a patent (application number: 94104451.2). The raw material used in the preparation of the main crystal phase of Tsinghua University is chemically pure strontium titanyl oxalate, which is relatively expensive. The sintering...

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Problems solved by technology

[0002] So far, there have been reports at home and abroad about grain boundary layer capacitor ceramics and semiconductor insulation using two firings, that is, the first step is in the H 2 with N 2 The semiconductor is fired in a mixed gas at a temperature of 1420°C and held for 4 hours; the second step is to coat the oxide slurry on the surface of the semiconducting ceramic piece, and burn and oxidize it at 1050°C. The process is complicated and not suitable for industrialization

Domestic Tsinghua University has already applied for a patent (application number: 94104451.2). The raw material used in the preparation of the main crystal phase of Tsinghua University is chemically pure strontium titanyl oxalate, which is relatively expensive. The sintering aid Sr(Li 1 / 4 Nb 3 / 4 ), LiCO 3 、 Bi 2 o 3 , SiO 2 Add SrCO 3 , the formula is complicated and the cost is high

SrTiO disclosed in US Patent US6292355 3 For grain boundary layer capacitors, the sintering aids added during the firing process are liquid-phase BaO and CaO, and the sintering temperature reaches 1400°C. The sintering temperature is high, the requirements for the preparation process and equipment are high, and the production cost is also high.