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Prepn of composite ZnAl2O4/alpha-Al2O3 Substrate and growth of GaN film on ZnAl2O4 substrate

A composite substrate, thin film growth technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the difficulty of using ZnO buffer layer, achieve easy control, improve utilization efficiency, and simple high-temperature reaction process. Effect

Inactive Publication Date: 2003-02-26
NANJING UNIV
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Problems solved by technology

The above reactions make the ZnO buffer layer difficult to be adopted by other GaN high temperature growth technologies

Method used

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  • Prepn of composite ZnAl2O4/alpha-Al2O3 Substrate and growth of GaN film on ZnAl2O4 substrate
  • Prepn of composite ZnAl2O4/alpha-Al2O3 Substrate and growth of GaN film on ZnAl2O4 substrate
  • Prepn of composite ZnAl2O4/alpha-Al2O3 Substrate and growth of GaN film on ZnAl2O4 substrate

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Embodiment Construction

[0018] 1. The cleaned α-Al 2 o 3 The substrate is sent into the pulsed laser deposition (PLD) system, in the α-Al 2 o 3 ZnO thin films were prepared on the substrate. The system uses a KrF laser (248nm). During growth, the oxygen bias in the growth chamber is 20Pa, α-Al 2 o 3 The temperature of the substrate was 550°C. The ZnO thin film thus obtained had a thickness of 500 nm.

[0019] 2. The ZnO / α-Al obtained in step 1 2 o 3 The sample is placed in a high temperature reaction furnace, ZnO and α-Al 2 o 3 Reaction at high temperature yields ZnAl 2 o 4 Overlay, especially 10-20 minutes is better (as shown in the picture). The temperature of the reaction furnace is between 900°C and 1100°C, and oxygen is used as the reaction atmosphere. The reaction time is to use dilute hydrochloric acid solution to corrode the unreacted ZnO layer, thus obtaining ZnAl 2 o 4 / α-Al 2 o 3 composite substrate.

[0020] 3, the ZnAl obtained in step 2 2 o 4 / α-Al 2 o 3 The compos...

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Abstract

The process of preparing composite ZnAl2O4 / alpha-Al2O3 substrate and growing GaN film on ZnAl2O4 substrate includes preparing ZnO film on alpha-Al2O3 substrate in a pulse laser deposition system through growth in oxygen atmosphere; setting the ZnO / alpha-Al2O3 sample in high-temperature reactor with oxygen reaction atmosphere to obtain ZnAl2O4 covering layer and thus composite ZnAl2O4 / alpha-Al2O3 substrate; and setting the composite ZnAl2O4 / alpha-Al2O3 substrate into GaN growing MOCVD system to grow GaN film. During the GaN growing process, no nitride buffering layer is grown, and this raised the repeatability of growth and the utilization of GaN growing system.

Description

1. Technical field [0001] The present invention relates to a kind of ZnAl 2 o 4 / α-Al 2 o 3 The preparation method of composite substrate, and in ZnAl 2 o 4 / α-Al 2 o 3 A method for growing high-quality GaN thin films on composite substrates. 2. Background technology [0002] Group III nitride materials have important application values ​​in blue and green light-emitting diodes (LEDs), blue lasers (LDs), ultraviolet light detectors, and high-temperature, high-power electronic devices because of their excellent properties. At present, the most widely used GaN growth method with relatively mature technology and industrial application value is metal organic chemical vapor deposition (MOCVD). Due to the relatively high melting point of GaN, N 2 The saturated vapor pressure is high, and the preparation of GaN bulk single crystal is very difficult, so the epitaxial growth of GaN is mainly in the α-Al 2 o 3 performed on heterogeneous substrates. However α-Al 2 o 3 The...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/365
Inventor 张荣毕朝霞王栩生修向前顾书林沈波施毅刘治国郑有炓江若琏朱顺明韩平胡立群
Owner NANJING UNIV