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Method for recovering ion injection doping dose monitoring sheet

An ion implantation and monitoring chip technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as cost increase and monitoring chip can no longer be used

Inactive Publication Date: 2003-04-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In such a process flow, after each measurement of the thermal wave (TW) value, the original monitoring chip will no longer be usable, and the monitoring silicon chip must be replaced, and another new silicon chip is used for monitoring
Therefore, an increase in the cost

Method used

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  • Method for recovering ion injection doping dose monitoring sheet
  • Method for recovering ion injection doping dose monitoring sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0009] According to the process flow, in step a, a new or recycled monitor sheet is used to deposit a high-temperature oxide (HTO) shielding layer with a thickness of ≥100 angstroms at a high temperature of 780°C;

[0010] Step b, in this embodiment, ion implantation is performed to dope boron. At an energy of 100KeV (kiloelectron volts), the dose is 5.0×10 13 / cm 2 , under the condition that the tilt angle (tilt) is 7 degrees, and the twist angle (twist) is 22 degrees, the ion implantation monitor sheet is performed.

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Abstract

The monitoring film recovering method includes the following steps: a). depositing shielding layer on new or recovered monitoring film; b). ion injecting into the monitoring film with deposited shielding layer; c). utilizing thermal wave apparatus to measure thermal wave value of the ion-injected monitoring film; and d) using hydrolfuoric acid steam to remove shielding layer and recovering the monitoring film which can be reused for monitoring ion injection doping dose.

Description

technical field [0001] The invention relates to a semiconductor ion implantation process, more specifically, relates to a recovery and reuse monitoring substrate sheet ion implantation doping dose monitoring sheet process method, which belongs to the semiconductor device manufacturing process. Background technique [0002] Methods for fabricating metal oxide semiconductor (MOS) devices are well established. In the manufacturing process, lightly doped n-type or p-type impurities into the single crystal silicon substrate first. In the ion implantation doping process, it is very important to monitor the ion implantation to ensure that the correct amount of dose is implanted into each single crystal silicon substrate substrate, and that the implanter remains in the correct state. Usually, before the actual product of the silicon single crystal substrate wafer is exposed to the implanter, it is monitored with a monitoring film. Nowadays, low and medium current ion implantation ...

Claims

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Application Information

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IPC IPC(8): H01L21/265
Inventor 苏俊铭宋建鹏肖天金黄晋德
Owner SEMICON MFG INT (SHANGHAI) CORP
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