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Carbon-containing alumium nitride sintered compact, and ceramic substrate for use in apparatus for manufacturing and inspecting semiconductor

A technology for ceramic substrates and testing equipment, which is applied in the field of carbon-containing aluminum nitride sintered bodies and ceramic substrates, and can solve the problems of inaccurate temperature measurement, poor temperature control, and thick thickness.

Inactive Publication Date: 2003-04-30
IBIDEN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, heaters made of metal have problems in that they have poor temperature control and can become very thick, making the heater heavy and bulky
Another problem with this heater is that it has poor corrosion resistance to corrosive gases
Moreover, when using an infrared thermal camera (surface thermometer) to measure the surface temperature of the heater, if the base material is black or light gray, its radiant heat will also be measured by the infrared thermal camera (thermoviewer), so it has not been possible Accurately measure temperature

Method used

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  • Carbon-containing alumium nitride sintered compact, and ceramic substrate for use in apparatus for manufacturing and inspecting semiconductor
  • Carbon-containing alumium nitride sintered compact, and ceramic substrate for use in apparatus for manufacturing and inspecting semiconductor
  • Carbon-containing alumium nitride sintered compact, and ceramic substrate for use in apparatus for manufacturing and inspecting semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0173] (1) The following components were mixed, and the mixture was put into a mold to obtain a molded body: 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corp., average particle diameter: 1.1 µm), 4 parts by weight of yttrium oxide (Y 2 o 3 , average particle diameter: 0.4 μm) and 8 parts by weight of an acrylic resin binder (manufactured by Kyoeisyha Chemical Co., Ltd., trade name: KC-600, acid value: 10KOHmg / g).

[0174] (2) The molded body was heated at 350° C. in a nitrogen atmosphere for 4 hours to thermally decompose the acrylic resin binder.

[0175] (3) At 1890°C and 150kg / cm 2 This molded body was hot-pressed under pressure for 3 hours to obtain an aluminum nitride sintered body.

[0176] Pulverize the sintered body, then heat the pulverized product at 500-800°C, and collect the generated CO x Gas, to determine the amount of carbon in the sintered body. The results of this measuring method confirmed that the amount of carbon contained i...

Embodiment 2

[0180] (1) The following components were mixed, and the mixture was put into a mold to obtain a molded body: 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corp., average particle diameter: 1.1 µm) and 8 parts by weight of acrylic resin bonded Agent (manufactured by Kyoeisyha Chemical Co., Ltd., trade name: KC-600, acid value: 17KOHmg / g).

[0181] (2) The molded body was heated at 600° C. for 1 hour in a nitrogen atmosphere to thermally decompose the acrylic resin binder.

[0182] (3) At 1890°C and 150kg / cm 2 This molded body was hot-pressed under pressure for 3 hours to obtain an aluminum nitride sintered body.

[0183] The carbon content in the obtained aluminum nitride sintered body was 805 ppm. Its brightness N is 3.5.

[0184] image 3 is a laser Raman spectrum showing the results of laser Raman spectroscopic analysis of carbon in the sintered body obtained in Example 2. The measurement conditions are the same as in Example 1.

[0185] Depe...

Embodiment 3

[0187] (1) The following components were mixed, and the mixture was put into a mold to obtain a molded body: 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corp., average particle diameter: 1.1 µm), 4 parts by weight of yttrium oxide (Y 2 o 3 , average particle diameter: 0.4 μm) and 8 parts by weight of an acrylic resin binder (manufactured by Kyoeisyha Chemical Co., Ltd., trade name: KC-600, acid value: 10KOHmg / g).

[0188] (2) The molded body was heated at 350° C. in a nitrogen atmosphere for 4 hours to thermally decompose the acrylic resin binder.

[0189] (3) At 1750°C and 150kg / cm 2 This molded body was hot-pressed under pressure for 3 hours to obtain an aluminum nitride sintered body.

[0190] The carbon content in the obtained aluminum nitride sintered body was 800 ppm. Its brightness N is 3.5.

[0191] According to the laser Raman spectrum analysis of the carbon in the sintered body obtained in Example 3, the peak intensity ratio I(1580 / I(...

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Abstract

A carbon-containing aluminum nitride sintered compact comprising an aluminum nitride matrix and, incorporated therein, a carbon which has peaks appearing in the vicinity of 1580 cm<-1> and 1355 cm<-1> as measured by the laser Raman spectrometry. The carbon-containing aluminum nitride sintered compact does not suffer from a short circuit due to its satisfactorily high volume resistivity of at least 1 x 10<8> OMEGA - cm in a high temperature region of 200 DEG C or higher (for example, 500 DEG C or so), is excellent in hiding properties, is increased with respect to radiant heat and can secure high accuracy in the measurement by a surface thermometer.

Description

technical field [0001] The present invention relates to an aluminum nitride sintered body which can be used as a material constituting a hot plate, an electric static chuck, a wafer detector, a susceptor, etc., mainly in the semiconductor industry; Aluminum nitride sintered body, this sintered body has excellent ability to cover electrode patterns, etc., high temperature volume resistivity and accuracy when measuring temperature with infrared thermal camera. [0002] The present invention also relates to a ceramic base material, which uses ceramics composed of the above-mentioned aluminum nitride sintered body, etc., and this ceramic base material can be used as a semiconductor manufacturing and testing equipment such as a hot plate, an electrostatic fixture or a wafer detector; specifically It relates to a ceramic substrate used in semiconductor manufacturing / testing equipment. The ceramic substrate has excellent ability to cover electrode patterns, etc., high-temperature vol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581
Inventor 平松靖二伊藤康隆
Owner IBIDEN CO LTD
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