Method for forming porous dielectric material layer on semiconductor device and formed device

Abstract

A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus achieving a dielectric material that has significantly improved dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

Description

technical field [0001] The present invention relates generally to methods of forming layers of dielectric material on electronic structures and the structures formed, and more particularly to methods of forming layers of porous dielectric materials on electronic structures and electronic structures formed from such materials, the method A layer of non-porous dielectric material is first formed, then locally cured, patterned, and finally cured at a higher temperature than used in the partial cure to convert the non-porous dielectric material to a porous dielectric material. Background technique [0002] In the recent development of semiconductor devices, the continuous miniaturization of devices requires the use of electronic materials with superior properties. For example, dielectric materials used as insulating layers in semiconductor devices must have lower dielectric constants to provide less signal propagation delay. Thus, it is important to prov...

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Problems solved by technology

However, problems arise when using porous dielectric materials, i.e. when these materials are first formed in electronic devices and then undergo a patterning process by means of reactive ion etching (RIE).

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