Thermal-oxidative production process of semiconductor wafer
A manufacturing process and thermal oxidation technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of improving the pass rate
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[0023] figure 1 The drawing is a schematic flowchart of a thermal oxidation manufacturing process of a semiconductor wafer according to a preferred embodiment of the present invention, and the steps of forming an oxide layer are as follows:
[0024] Step 102: Load the wafers into the furnace tube, wherein several wafers can be placed in a boat, and then load the boat into the furnace tube. In the step of loading the wafer into the furnace tube, the temperature of the wafer during loading is lower than the temperature of the main thermal oxidation production process, for example, the temperature is about 400 degrees Celsius to 600 degrees Celsius. A first gas with a large flow rate sufficient to drive away the water vapor and oxygen in the furnace tube is passed into the furnace tube, wherein the first gas is nitrogen or argon, and its flow rate is about 30 to 45 liters / min, and the first gas is passed through. The concentration of the incoming first gas is greater than 99.99%...
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