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Semiconductor devices

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as high temperature melting, flow away, and reducing the reliability of semiconductor devices

Inactive Publication Date: 2003-10-15
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it may cause the semiconductor chip to flow away under the pressure used in this filling process, or it may be melted by high temperature
[0010] These problems become the cause of significantly lowering the reliability of semiconductor devices

Method used

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  • Semiconductor devices
  • Semiconductor devices
  • Semiconductor devices

Examples

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Embodiment Construction

[0029] Embodiments according to the present invention will be described in detail below with reference to the accompanying drawings.

[0030] figure 2 A cross-sectional view of a semiconductor device according to one embodiment of the present invention is shown.

[0031] In the semiconductor component shown here, a semiconductor chip 4 is mounted on the surface of a substrate 1 via an electrically conductive connection part 2 . The substrate 1 may be formed of polyimide tape or ceramics, and has terminals 6 for external connection on its lower surface.

[0032] Although not shown in the drawings, the conductive connection member 2 is composed of bumps for the semiconductor chip 4 and bumps for the wiring circuit terminals of the substrate 1 . These bumps may be formed of, for example, tin / silver solder, gold, tin / lead solder, tin, tin / silver / copper solder, tin / zinc solder, tin / bismuth solder, or nickel. The terminal 6 for external connection can be formed of, for example, ...

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Abstract

Disclosed is a semiconductor device comprising: a substrate; a first semiconductor chip having a thickness of 0.25 mm or less and mounted on the substrate through flip chip connection with a gap of 0.055 mm or less; a conductive connector member electrically connecting the chip to the substrate; and a molding resin layer covering the chip and formed of a cured resin composition comprising 75-92% by weight of an inorganic filler and 0.5-1.5% by weight of carbon black, a portion of the molding resin layer opposite to the substrate having a thickness of 0.15 mm or less, 99 wt% of the filler having longest diameter of 35 mum or less, the average longest diameter of the filler being 15 mum or less, and the content of fine filler having a longest diameter of 10 mum or less is within the range of 30-50% by weight based on the entire weight of the filler.

Description

[0001] Cross References to Related Applications [0002] This application is based upon and claims priority from prior Japanese Patent Application No. 2002-090393 filed on March 28, 2002, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device, in particular to a semiconductor device in which a semiconductor chip is encapsulated with an encapsulation resin. Background technique [0004] Many efforts have been made to further miniaturize and make semiconductor devices thinner in order to maintain recent technological developments in the field of semiconductor integrated circuits for improving the degree of integration and reliability of semiconductor integrated circuits. In order to meet such a trend, there is currently an increasing demand for an encapsulating resin excellent in development characteristics. [0005] In the traditional flip-chip quad outline non-leaded...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/29H01L23/48H01L25/00
CPCH01L2224/32145H01L2224/73265H01L2224/45144H01L2924/00H01L23/29
Inventor 福田昌利河合薰
Owner KK TOSHIBA