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Method for mfg. Y-direction antomatic oriented mask ROM

A read-only memory and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inability to improve memory cell margins, avoid tailing bit effects, improve memory cell margins, The effect of preventing ion diffusion

Inactive Publication Date: 2004-01-07
MACRONIX INT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, it will not be possible to increase the storage unit margin in the memory component (Cell Window)

Method used

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  • Method for mfg. Y-direction antomatic oriented mask ROM
  • Method for mfg. Y-direction antomatic oriented mask ROM
  • Method for mfg. Y-direction antomatic oriented mask ROM

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Embodiment Construction

[0036] figure 2 , which is a top view of a Y-direction self-aligned mask ROM device according to a preferred embodiment of the present invention; Figure 3A to Figure 3I As shown, it is a schematic cross-sectional view of the manufacturing process of a Y-direction self-aligned mask read-only memory according to a preferred embodiment of the present invention, which is figure 2 The cross-sectional schematic diagram of X-X' and Y-Y' in the middle.

[0037] Please refer to figure 2 and Figure 3A , Figure 3A for figure 2 The cross-sectional schematic diagram of X-X' in the middle. The Y-direction self-aligned mask read-only memory manufacturing method of the present invention firstly provides a substrate 200, wherein the substrate 200 has a memory cell area 300 and a peripheral circuit area 302, and an isolation circuit has been formed in the peripheral circuit area 302 structure 201 to define an active area 204 . Here, the isolation structure 201 may be a field oxida...

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Abstract

A method for processing a y-direction self-aligned mask read-only memory is first of all to form an imbedded position line in the base and a gate oxide layer on its surface then to form a strip silicon nitride layer on the gate oxide layer vertical to the imbedded position line then to form a pattern photo-resist layer on the gate oxide layer and the silicon-nitride layer, to code and layout with the photo-resist layer as a mask to form several code memory units, then to remove the photo-resist layer to form a polysilicon layer on the two layers and etch the polysilicon lay to expose the strip silicon nitride layer to be removed finally.

Description

technical field [0001] The present invention relates to a method for manufacturing a memory component, and in particular to a method for manufacturing a Y-direction self-aligned mask read-only memory (Mask ROM). Background technique [0002] Masked ROM is the most basic type of ROM. It mainly adjusts its threshold voltage (Threshold Voltage) through the ion implantation process, so as to achieve the purpose of controlling the memory cell to be turned on (On) or turned off (Off). When the product of the mask-type ROM is changed, its manufacturing process does not need to be greatly modified, but only a set of photomasks used is changed, so it is very suitable for mass production, and even part of the manufacturing process can be made first. When the finished semi-finished products are ordered to the factory, these semi-finished products can be quickly programmed (Programming), which can effectively shorten the delivery time. [0003] Figure 1A to Figure 1C As shown, it is ...

Claims

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Application Information

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IPC IPC(8): H01L21/8246
Inventor 潘仁泉
Owner MACRONIX INT CO LTD
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