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Proximity effect correction method of electronic beam exposure and use thereof

A technology of electron beam exposure and proximity effect, which can be applied to microlithography exposure equipment, photolithographic process exposure devices, circuits, etc., and can solve problems such as insufficient correction accuracy.

Inactive Publication Date: 2004-01-28
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, if we use the base layer pattern area density α 10 There is a problem that sufficient correction accuracy cannot be obtained in the existing correction formula

Method used

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  • Proximity effect correction method of electronic beam exposure and use thereof
  • Proximity effect correction method of electronic beam exposure and use thereof
  • Proximity effect correction method of electronic beam exposure and use thereof

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Experimental program
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Effect test

Embodiment approach 1

[0035] The electron beam exposure apparatus of Embodiment 1 of the present invention, such as figure 1 Shown is an apparatus that performs exposure while variable-controlling the size of the electron beam EB using the first and second shaping apertures 105 and 108 . The electron beam EB emitted from the electron gun 101 is adjusted by the first focusing lens 103 and the second focusing lens 104 to adjust the current density and the Köhler illumination condition, so that the first shaping aperture 105 is uniformly illuminated. The image of the first forming aperture 105 is formed on the second forming aperture 108 by means of the first projection lens 106 and the second projection lens 107 . A plurality of openings for shaping the electron beam EB are provided in the second shaping aperture 108, and the electron beam EB is irradiated to a position passing through a part of the opening according to the size defined in the drawing layer pattern data.

[0036] The irradiation po...

Embodiment approach 2

[0062] The proximity effect correction method according to embodiment 2 of the present invention is the case where there are first and second base layer graphics in the lower structure of the drawing layer graphics, and it is characterized in that the proximity effect correction formula can be linearized with three kinds of pattern area densities. In conjunction with the description, other than that, it is the same as Embodiment 1, and overlapping descriptions are omitted.

[0063] use Figure 6 and Figure 7 The proximity effect correction method according to Embodiment 2 of the present invention will be described.

[0064] (1) First, in Figure 6 In step S70, the graphics data decoder 119 reads out the stored drawing layer graphics, the first and the second base layer graphics data from the graphics data memory 118, decomposes each unit area into graphics size and coordinates, and sends The output of the area density calculation unit 140 of the proximity effect correction...

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Abstract

A method for correcting a proximity effect applied to a dose of an electron beam exposure, includes classifying an underlying pattern of a level underlying a thin film layer; dividing a processing pattern to be transferred on the thin film layer into a first pattern overlapping with the underlying pattern and a second pattern which does not overlap with the underlying pattern according to the classified underlying pattern; calculating a pattern area density for the first and second patterns in a unit region; and calculating a corrected dose for the processing pattern according to the pattern area density.

Description

technical field [0001] The present invention relates to an exposure method of an electron beam, in particular to a correction method of the proximity effect, an exposure method using the correction method of the proximity effect, a proximity effect correction module and a manufacturing method of a semiconductor device. Background technique [0002] Photolithography has been widely used in the production of semiconductor devices such as large scale integration (LSI) due to its advantages of process simplicity, low price, and the like. Technological innovation never stops, and in recent years, the miniaturization of components on the order of 0.1 microns has been achieved with the shortening of the wavelength of light sources such as argon fluoride (ArF) excimer lasers. In addition, for further miniaturization, fluorine gas (F 2 ) development of excimer laser exposure equipment, it is expected that it will become a mass-produced lithography tool for the next-generation produc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F7/00G03F9/00H01J37/302H01J37/304H01J37/317H01L21/027
CPCB82Y10/00H01J37/3175H01J2237/31769B82Y40/00H01L21/027
Inventor 马越俊幸佐藤信二
Owner KK TOSHIBA