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Method for producing noncrystal SiO2 coated SiC coaxial nano cable

A technology of nano-cables and synthesis methods, which is applied in the manufacture of coaxial cables, coaxial cables/analog cables, etc., can solve problems such as high synthesis temperature, complex synthesis process, and limitations on the application research of SiC coaxial nano-cables, and reach the synthesis temperature The effect of low cost and simple synthesis process

Inactive Publication Date: 2004-02-04
NORTHWESTERN POLYTECHNICAL UNIV
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  • Claims
  • Application Information

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Problems solved by technology

However, there are still some deficiencies in the existing methods for synthesizing coaxial nanocables, such as the need for high synthesis temperature (1800°C) or the complexity of the synthesis process, etc.; the amount of synthesized products is relatively small, which is not suitable for future scale-up production, but also limits people's research on the novel properties and possible applications of SiC coaxial nanocables

Method used

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  • Method for producing noncrystal SiO2 coated SiC coaxial nano cable
  • Method for producing noncrystal SiO2 coated SiC coaxial nano cable
  • Method for producing noncrystal SiO2 coated SiC coaxial nano cable

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Embodiment Construction

[0020] 1. Select commercially available Si powder with a purity of 99.5%, and spectrally pure SiO 2 Powder and C 3 h 6 gas as raw material. First of all Si powder and SiO 2 The powder is ball milled, and the ball milling is carried out on a planetary ball mill.

[0021] The process is as follows: respectively called Si powder and SiO 2 Each powder is 25g, placed in different resin ball mill jars:

[0022] At the same time, take different numbers of agate balls with different diameters according to the attached table and put them in the ball milling jar, then add an appropriate amount of ethanol as the ball milling agent, put the ball milling jar on the ball mill and clamp it. Turn on the ball mill, first ball mill at a slower speed of 130 rpm for 2 hours, then adjust the speed to 200 rpm, mill for 23 hours, and then rotate the ball mill in the opposite direction for 23 hours, totaling 48 hours of ball milling. Si powder and SiO after ball milling 2 Take out ...

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Abstract

The method includes the following steps: (1) taking certain amount of Si powder and SiO2, powder for ball grinding treatment, (2) putting them into agate mortar for sufficient mixing with their ratio of Si:SiO2=1:1.2-1.5, (3) carrying on catalyst addition processing to C / C composite substrate, (4) putting above two and carbon cloth into graphite reaction chamber, (4) placing the chamber in vertical vacuum furnace, (5) raising temperature of furnace to 900-1000 degree.C and vacuum-pumping pressure of the furnace to 400 torr and (6) raising temperature to 1200-1300 degree c, connecting C3H6 gas for 5-10 minute, holding temperature for 10-20 minute and cooling it down to room temperature.

Description

Technical field: [0001] The present invention relates to a kind of amorphous SiO 2 The synthesis method of coated SiC coaxial nanocable can synthesize semiconductor SiC with good performance as the core, and insulator SiO 2 A coaxial nanocable for the shell. Background technique: [0002] A coaxial nanocable refers to a nanowire whose core is a semiconductor or a conductor, the outer layer is covered with a heterogeneous shell, and the outer shell and the core nanowire are coaxial. Due to the unique properties of this kind of materials, rich scientific connotations, broad application prospects and strategic position in future nanostructure devices. Therefore, the researchers proposed the following method on how to obtain coaxial nanocables. Arc discharge method: It was proposed by French scientist Colliex in 1997, and C-BN-C nanotubes with sandwich geometry were obtained by this method [published in Suenaga K., Colliex C., Demoncy N., Loiseau A., Pascard H . Science 278 ...

Claims

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Application Information

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IPC IPC(8): H01B11/18H01B13/016
Inventor 李镇江李贺军
Owner NORTHWESTERN POLYTECHNICAL UNIV
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