Ferroelectric memory device and its programming method

A ferroelectric storage and device technology, applied in static memory, read-only memory, digital memory information and other directions, can solve problems such as non-recovery
CN1479311AInactive Publication Date: 2004-03-03SK HYNIX INC
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Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
SK HYNIX INC
Publication Date
2004-03-03
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

A non-volatile ferroelectric memory device is provided to output variously reference voltages by applying a programmable register device to a reference generation unit. A non-volatile ferroelectric memory device includes a reference program unit and a reference voltage generation unit. The reference program unit controls and outputs a voltage of a reference level control signal by controlling a state of a switch. The switch is used for controlling a capacitor connected to the driving power by using a programmable register device for programming a level of an output signal according to an external signal. The reference voltage generation unit outputs a reference voltage according to a reference level control signal.
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Description

Technical field

[0001] The present invention generally relates to ferroelectric memory devices, and more specifically to a ferroelectric memory device including a reference voltage generator and a redundant decoder. The reference voltage generator uses a programmable register to adjust the reference voltage level, and it uses an external signal to program the output signal voltage. The programming result is maintained without power supply to control the on / off of the switch. The switch adjusts the capacitance of the capacitor connected to the driving power supply. The redundant decoder uses a programmable register as the on / off of the switch Turn on the controller for programming redundant address programs. Background technique

[0002] In general, ferroelectric random access memory (hereinafter referred to as "FRAM") as the memory of the next century has attracted great attention, because its processing speed is as fast as DRAM, even when the power is disc...

Claims

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