Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor light-emitting component

A technology of semiconductor and light-emitting area, applied in semiconductor lasers, electrical components, laser parts, etc., can solve the problems of shortening the band gap wavelength and so on

Inactive Publication Date: 2004-03-10
KK TOSHIBA
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If this band gap is extended, the band gap wavelength becomes shorter
Also, in general, semiconductors do not absorb light with a wavelength not smaller than the bandgap wavelength

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor light-emitting component
  • Semiconductor light-emitting component
  • Semiconductor light-emitting component

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0017] figure 1 It is a sectional view of the semiconductor laser element of the first embodiment of the present invention. On the n-type GaAs substrate 101 sequentially formed by In 0.5 (Ga 0.3 Al 0.7 ) 0.5 The n-type cladding layer 102 composed of P, made of In 0.5 (Ga 0.4 Al 0.6 ) 0.5 The waveguide layer 103 composed of P, the active layer 104, and the In 0.5 (Ga 0.4 Al 0.6 ) 0.5 The waveguide layer 105 composed of P, made of In 0.5 (Ga 0.3 Al 0.7 ) 0.5 The p-type cladding layer 106 made of P, and the p-type contact layer 107 made of GaAs. The above-mentioned active layer 104 is made of In 0.5 (Ga 0.5 Al 0.5 ) 0.5 Potential well layer 104A composed of P and In 0.5 Ga 0.5 The multiple quantum well (MQW: Multiple Quantum Well) structure formed by the barrier layer 104B composed of P. A current is injected into the active layer 104 from the p-side electrode 191 in the upper part of the drawing and the n-side electrode 192 in the lower part of the drawing...

no. 2 Embodiment

[0033] Figure 4 It is a cross-sectional view showing a semiconductor laser element according to a second embodiment of the present invention. Figure 4 The structure of the elements is that the elements of the first embodiment ( figure 1 ) during crystal growth to consist of In 0.5 (Ga 0.3 al 0.7 ) 0.5 After the p-type cladding layer 106 composed of P, the window regions 112, 122 are formed, and the current blocking layer 108 composed of n-type GaAs is formed on the above-mentioned window regions 112, 122, so that the current is not easy to flow, and then the entire surface is formed by GaAs. p-type contact layer 107. The structure of other parts is the same as that of the first embodiment ( figure 1 ) are roughly the same, and detailed descriptions are omitted.

[0034] exist Figure 4 In the structure, by providing the current blocking layer 108, the current injection into the window regions 112, 122 can be further reduced, and the temperature rise can be suppress...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

A semiconductor laser element, enhanced in light output power without decreasing the reliability, has a window structure including window regions wider in bandgap than the emission region of the laser, in which the bandgap of the rear window region is narrower than the bandgap of the front window region.

Description

technical field [0001] The invention relates to a semiconductor laser element, in particular to a semiconductor laser element with a window structure of 600nm band and high light output power. Background technique [0002] In recent years, semiconductor laser elements using InGaAlP-based semiconductors with a wavelength of 600nm to 700nm have begun to be put into practical use in DVDs (digital versatile disks: digital versatile disks), etc. High light output power. When high optical output power is achieved, due to the irreversible end face damage (COD: Catastrophic Optical Damage) problem, a window region (window region) is usually set on the output end face of the laser. A structure for setting such a window area is called a window structure. [0003] Figure 5 It is a sectional view of a conventional example of a semiconductor laser element having this window structure. The laser element is sequentially formed on the n-type GaAs substrate 201 by In 0.5 (Ga 0.3 Al 0....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/16G11B7/125G11B7/127H01S5/00H01S5/028H01S5/343
CPCH01S5/168H01S5/028H01S5/164H01S5/34326B82Y20/00H01S5/3436H01S5/162G11B7/127
Inventor 田中明
Owner KK TOSHIBA