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Semiconductor device and mfg. method thereof

A technology of semiconductors and manufacturing methods, which is applied in the field of semiconductor device manufacturing, can solve problems such as complex process procedures, and achieve the effects of avoiding mask misalignment and suppressing product rate reduction

Inactive Publication Date: 2004-05-05
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In this way, to fabricate TFTs with different structures on the same substrate, the process program becomes quite complicated.

Method used

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  • Semiconductor device and mfg. method thereof
  • Semiconductor device and mfg. method thereof
  • Semiconductor device and mfg. method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0106] Refer below Figure 5 A method of fabricating a liquid crystal display device using an active matrix substrate having a functional circuit area and a pixel area is described.

[0107] The structure of an active matrix liquid crystal display device using TFT as a switching element is as follows: the substrate (active matrix substrate) where the pixel electrodes are arranged in a matrix is ​​opposite to the opposite substrate on which the counter electrode is formed. a liquid crystal layer. A spacer or the like is used to control the distance between the two substrates at a certain interval. The outer periphery of the pixel portion seals the liquid crystal layer between the substrates with a sealing material.

[0108] Hereinafter, a method of fabricating an active matrix substrate having a functional circuit area and a pixel area will be described. The structure of the TFT described in Embodiment Mode 1 is applicable to this embodiment. because Figure 5 The n-channel ...

Embodiment 2

[0135] Refer to the attached Image 6 A method of fabricating an EL display device fabricated using an active matrix substrate having a pixel portion and a functional circuit portion will be described.

[0136] An EL display device using TFTs as switching elements is composed of a substrate (active matrix substrate) and a sealing member on which pixel electrodes are arranged in a matrix, and a counter electrode is formed on the EL layer on the pixel electrodes. The substrate and seal are sealed by an adhesive material.

[0137] Hereinafter, a fabrication example of an active matrix substrate will be described.

[0138]According to the same steps as in Embodiment 1, an n-channel TFT 640 and a p-channel TFT 641 are formed in the functional circuit part, and a current control TFT 642 made of a p-channel TFT and a current control TFT 642 made of an n-channel TFT are formed in the pixel part. The switch TFT643 made of TFT. Note that the TFT described in Embodiment Mode 1 is appl...

Embodiment 3

[0160] In this example, reference will be made to the attached Figures 7A-7D An example of a manufacturing method of a semiconductor layer in which the TFTs described in Embodiment Mode 1 to Embodiment Mode 4, Example 1 and Example 2 are applied to the semiconductor layer will be described. In this embodiment, a continuous oscillating laser beam scans an amorphous silicon film formed on an insulating surface, thereby crystallizing it.

[0161] Such as Figure 7AAs shown, a base layer 702 including a silicon oxynitride film with a thickness of 100 nm is formed on a glass substrate 701 . On the base layer 702, an amorphous silicon film 703 is formed to a thickness of 54 nm by the plasma CVD method.

[0162] Next, if Figure 7B As shown, the semiconductor layer is irradiated with a laser beam. The laser beam irradiated on the semiconductor layer is from Nd:YVO 4 The continuous beam emitted by the laser is the second harmonic (532nm) obtained by the wavelength conversion ele...

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Abstract

It is an object of the present invention to form a TFT which is required to have a high pressure resistant characteristic as well as to lower an off-current, a TFT which is required to have a high pressure resistant characteristic as well as to raise an on-current, and a TFT in which a short channel structure and the decline in the threshold voltage arising therefrom are attached importance to, on one and the same substrate. A TFT having gate insulating films with different thickness can be formed on one and the same substrate by providing auxiliary electrodes in addition to the gate electrodes over a semiconductor film as well as laminating the insulating films.

Description

technical field [0001] The present invention relates to a semiconductor device including a circuit composed of thin film transistors (hereinafter abbreviated as TFT) and a method of manufacturing such a semiconductor device. Specifically, the present invention relates to a display module typified by an active matrix type liquid crystal module and an EL module made of TFT, and an electronic device equipped with a similar display module as its component. Background technique [0002] In recent years, semiconductor devices having large-scale integrated circuits formed with TFTs have been greatly developed. These TFTs include semiconductor thin films (thickness of the film is on the order of several nm to several hundred nm) formed on a substrate having an insulating surface. Active matrix type liquid crystal display devices, EL display devices, and close-coupled type image sensors are known as typical examples of these semiconductor devices. Moreover, a screen-mounted system ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/77H01L21/84H01L27/12H01L29/49H01L29/786
CPCH01L29/78675H01L27/1214H01L29/4908H01L29/78645H01L29/66757H01L27/12H01L27/124
Inventor 荒尾达也
Owner SEMICON ENERGY LAB CO LTD
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