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Transistor type formaldehyde sensor and manufacturing method thereof

A technology of formaldehyde sensor and manufacturing method, which is applied in the field of transistor-type formaldehyde sensor and its manufacture, can solve the problems of formaldehyde sensor stability and poor selectivity, and achieve the effect of solving stability

Active Publication Date: 2018-12-18
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the object of the present invention is to provide a transistor-type formaldehyde sensor and its manufacturing method, aiming to solve the problem of poor stability and selectivity of the formaldehyde sensor in the prior art

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] On the flexible PDMS substrate, silver is thermally evaporated through a mask to form a gate electrode, and a 30-nanometer-thick aluminum oxide dielectric layer is prepared on the gate electrode by atomic layer deposition;

[0053] Dissolve zinc oxide in ammonium hydroxide and refrigerate for 5 hours, then add deionized water and hydroxides of lithium, sodium, and potassium to the zinc oxide solution. The molar ratio of alkali metal hydroxide and zinc oxide added here is The ratio is 0.1:1 to obtain the zinc oxide thin film precursor solution. The zinc oxide film precursor solution is spin-coated on the dielectric layer, the spin-coating speed is 3000rpm, the time is 30s, annealing at 200°C for 0.5h, and the nano-zinc oxide film is obtained;

[0054] Heat tetrachloroauric acid solution to 100°C, add sodium citrate, here the molar ratio of sodium citrate and tetrachloroauric acid is 3.78:1, the reaction continues for 30 minutes, and finally the solution is cooled to room...

Embodiment 2

[0057] On the flexible PDMS substrate, silver is thermally evaporated through a mask to form a gate electrode, and a 30-nanometer-thick aluminum oxide dielectric layer is prepared on the gate electrode by atomic layer deposition;

[0058] Dissolve zinc oxide in ammonium hydroxide and refrigerate for 5 hours, then add deionized water and hydroxides of lithium, sodium, and potassium to the zinc oxide solution. The molar ratio of alkali metal hydroxide and zinc oxide added here is The ratio is 0.01:1 to obtain the zinc oxide thin film precursor solution. The zinc oxide film precursor solution is spin-coated on the dielectric layer, the spin-coating speed is 3000rpm, the time is 30s, annealing at 200°C for 0.5h, and the nano-zinc oxide film is obtained;

[0059] At room temperature, mix and stir sodium citrate and silver nitrate, the molar ratio of sodium citrate and silver nitrate is 3.78:1, then immediately add sodium borohydride, the reaction continues for 20 minutes, and final...

Embodiment 3

[0062] On the flexible PDMS substrate, silver is thermally evaporated through a mask to form a gate electrode, and a 30-nanometer-thick aluminum oxide dielectric layer is prepared on the gate electrode by atomic layer deposition;

[0063] Dissolve zinc oxide in ammonium hydroxide and refrigerate for 5 hours, then add deionized water and hydroxides of lithium, sodium, and potassium to the zinc oxide solution. The molar ratio of alkali metal hydroxide and zinc oxide added here is The ratio is 0.15:1 to obtain the zinc oxide thin film precursor solution. The zinc oxide film precursor solution is spin-coated on the dielectric layer, the spin-coating speed is 3000rpm, the time is 30s, annealing at 200°C for 0.5h, and the nano-zinc oxide film is obtained;

[0064] At room temperature, mix and stir sodium citrate and platinum quaternary salt, the molar ratio of sodium citrate and platinum quaternary salt is 3.78:1, then add sodium borohydride immediately, the reaction continues for 6...

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Abstract

The invention discloses a transistor type formaldehyde sensor and a manufacturing method thereof. The transistor type formaldehyde sensor comprises a substrate, a gate electrode arranged on the substrate, a dielectric layer arranged on the gate electrode, a composite film arranged on the dielectric layer, a source electrode and a drain electrode arranged on the composite film, wherein the composite film is a zinc oxide film onto which the metal nanoparticles are adsorbed. The transistor type formaldehyde sensor provided by the invention has specific selectivity for formaldehyde and strong anti-interference performance, and solves the problem that the stability and selectivity of the formaldehyde sensor are poor in the prior art.

Description

technical field [0001] The invention relates to the field of sensor devices, in particular to a transistor-type formaldehyde sensor and a manufacturing method thereof. Background technique [0002] As a semiconductor gas sensor, formaldehyde sensor is an important gas sensor in household environment detection. Convenient, easy to match with the test system, easy to replace, and can directly convert gas concentration into electrical signals, etc., but in practical applications, there are also disadvantages such as poor stability and selectivity, complex sensitive mechanism, high working temperature, and short life. Improving the comprehensive performance of this type of sensor has become the focus of research on this type of sensor. [0003] Therefore, the prior art still needs to be improved and developed. Contents of the invention [0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a transistor-type fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 周晔徐兴雨韩素婷
Owner SHENZHEN UNIV
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