4results about How to "Change surface state" patented technology

The invention discloses a resin grinding wheel and a manufacturing method thereof. The invention discloses a resin grinding wheel, which belongs to the technical field of grinding wheels and is prepared from the following raw materials in parts by mass: 55 to 75 parts of grinding material, 5 to 10 parts of phenolic resin powder, 20 to 35 parts of filler, 1 to 8 parts of impregnant, 0 to 0.3 part of enhancer A, 1 to 2 parts of enhancer B and 1 to 5 parts of wetting agent. The impregnant is formed by mixing 0.55 to 4.5 parts of ethylene glycol and 0.45 to 3.5 parts of a silane coupling agent. The impregnant can be completely spread and coated on the surfaces of grinding materials and powder materials or permeate into air holes, gullies and gaps of the materials, the surface state and surface chemical properties of the materials are changed, the impregnant and the phenolic resin powder are good in compatibility, part of the phenolic resin powder is dissolved by the impregnant when the impregnant and the phenolic resin powder are mixed, and the mechanical property of the materials is improved. The impregnant can introduce the resin component into the microscopic surface of the material, so that the coating performance of the resin and the material is enhanced.

The invention provides a composite infiltrated layer and a preparation method and application thereof. The preparation method comprises the following steps: performing shot blasting treatment on the surface of an electric power fitting; performing zinc impregnation treatment on the electric power fitting after shot blasting treatment; and nitriding treatment is carried out on the electric power fitting after zinc impregnation treatment, and a composite permeation layer is formed on the surface of the electric power fitting. Corrosion resistance and aging resistance of the electric power fitting can be improved, reliable operation of an electric power system is guaranteed, and the requirement for wear resistance of the electric power fitting of an overhead transmission line is met.

The invention relates to the technical field of corrosion inhibitors, and discloses a high temperature corrosion inhibitor and a preparation method thereof. The invention obtains the high temperature corrosion inhibitor by adding boric acid modified chitosan, a triazine-based corrosion inhibitor and deionized water into a reactor and stirring. The lone pair electrons provided by a large number of free hydroxyl groups in the chitosan in the boric acid modified chitosan can be well adsorbed to the metal, thereby protecting the metal from corrosion by the corrosive medium; the boron element inhibits the corrosion process by forming a protective oxide film or adsorption film on the metal surface; the ferrocene group itself also has a good corrosion inhibition effect. The quaternary ammonium salt group and the sulfonic acid group in the triazine-based corrosion inhibitor can prevent further corrosion of the metal.

The application relates to a semiconductor detector, a CT scanning device and a detector position error measurement system. The semiconductor detector is applied to the CT scanning device and comprises a base structure, a protection layer and an engraved layer. The base structure comprises a semiconductor crystal layer and an electrode layer group, the electrode layer group comprises a planar electrode layer and a pixel electrode layer, the semiconductor crystal layer has a first surface and a second surface which are oppositely arranged along the thickness direction of the semiconductor crystal layer, the planar electrode layer is arranged on the first surface, and the pixel electrode layer comprises a plurality of pixel electrodes which are arranged on the second surface at intervals. The protection layer is arranged on at least part of the surface of the base structure. The engraved layer is formed on the side of the protection layer which is away from the base structure, and the engraved layer carries engraved information. The semiconductor detector can be engraved with marks on the surface without affecting the performance of the semiconductor detector, so that the crystal direction and other information of each semiconductor detector can be quickly identified during the installation process, and the installation efficiency is improved. After the installation is completed, the information of each semiconductor detector can be identified and traced according to the mark information.