10results about How to "Change surface state" patented technology

The invention belongs to the technical field of high polymer materials, and particularly discloses a cross-linked antistatic supercritical microcellular foaming material. Comprising the following raw materials in parts by weight: 80-100 parts of HIPS, 10-15 parts of thermoplastic elastomer, 5-10 parts of low-density polyethylene, 10-15 parts of organic multifunctional master batch, 5-10 parts of high-dispersion conductive functional filler, 5-10 parts of modified calcium sulfate whisker, 5-10 parts of grafted modified talcum powder master batch, 1-5 parts of cross-linking agent, 1-5 parts of lubricant and 1-5 parts of antioxidant. The invention provides a cross-linked antistatic supercritical microcellular foaming material as well as a preparation method and application thereof. The cross-linked antistatic HIPS supercritical microcellular foaming material which is excellent in comprehensive performance and can be applied to multiple fields is prepared.

The invention relates to the technical field of corrosion inhibitors, and discloses a high-temperature-resistant corrosion inhibitor and a preparation method thereof.The high-temperature-resistant corrosion inhibitor is obtained by adding boric acid modified chitosan, a triazinyl corrosion inhibitor and deionized water into a reactor and stirring. Lone pair electrons provided by a large number of free hydroxyl groups in chitosan in the boric acid modified chitosan can be well adsorbed with metal, so that the metal is prevented from being eroded by a corrosive medium; the boron element forms a protective oxidation film or adsorption film on the metal surface, so that the corrosion process is inhibited; and the ferrocene group in the corrosion inhibitor also has a relatively good corrosion inhibition effect. A quaternary ammonium salt group and a sulfonic acid group in the triazinyl corrosion inhibitor can prevent further corrosion of metal.

The present application discloses a method for testing the resistivity of a conductive silicon carbide wafer after cutting, which belongs to the technical field of silicon carbide wafers, and includes the following steps: a. Segmented cleaning: placing the cut silicon carbide wafer in a basket, and sequentially soaking it in an acid-base tank containing an organic solvent, an acid or alkali solution, and water, and ultrasonicating it in an organic solvent after cleaning, and drying it; b. Using an FRT surface tester, testing the thickness of multiple points on the surface of the wafer, and finally obtaining the average value of the thickness data; c. Using a non-contact resistivity tester, inputting the average thickness of the wafer, setting the test points according to the point distribution, and testing the probe twice at each point during the test, and finally drawing a resistivity distribution map of the entire wafer surface, and statistically calculating the maximum value, minimum value, and average value. The present application uses a limited type of solution for cleaning, advances the resistivity test to before grinding, and saves costs; matching a specific point distribution provides an accurate basis for judging the quality of the wafer.

The invention discloses a resin grinding wheel and a manufacturing method thereof. The invention discloses a resin grinding wheel, which belongs to the technical field of grinding wheels and is prepared from the following raw materials in parts by mass: 55 to 75 parts of grinding material, 5 to 10 parts of phenolic resin powder, 20 to 35 parts of filler, 1 to 8 parts of impregnant, 0 to 0.3 part of enhancer A, 1 to 2 parts of enhancer B and 1 to 5 parts of wetting agent. The impregnant is formed by mixing 0.55 to 4.5 parts of ethylene glycol and 0.45 to 3.5 parts of a silane coupling agent. The impregnant can be completely spread and coated on the surfaces of grinding materials and powder materials or permeate into air holes, gullies and gaps of the materials, the surface state and surface chemical properties of the materials are changed, the impregnant and the phenolic resin powder are good in compatibility, part of the phenolic resin powder is dissolved by the impregnant when the impregnant and the phenolic resin powder are mixed, and the mechanical property of the materials is improved. The impregnant can introduce the resin component into the microscopic surface of the material, so that the coating performance of the resin and the material is enhanced.

The invention provides a composite infiltrated layer and a preparation method and application thereof. The preparation method comprises the following steps: performing shot blasting treatment on the surface of an electric power fitting; performing zinc impregnation treatment on the electric power fitting after shot blasting treatment; and nitriding treatment is carried out on the electric power fitting after zinc impregnation treatment, and a composite permeation layer is formed on the surface of the electric power fitting. Corrosion resistance and aging resistance of the electric power fitting can be improved, reliable operation of an electric power system is guaranteed, and the requirement for wear resistance of the electric power fitting of an overhead transmission line is met.

The invention relates to the technical field of corrosion inhibitors, and discloses a high temperature corrosion inhibitor and a preparation method thereof. The invention obtains the high temperature corrosion inhibitor by adding boric acid modified chitosan, a triazine-based corrosion inhibitor and deionized water into a reactor and stirring. The lone pair electrons provided by a large number of free hydroxyl groups in the chitosan in the boric acid modified chitosan can be well adsorbed to the metal, thereby protecting the metal from corrosion by the corrosive medium; the boron element inhibits the corrosion process by forming a protective oxide film or adsorption film on the metal surface; the ferrocene group itself also has a good corrosion inhibition effect. The quaternary ammonium salt group and the sulfonic acid group in the triazine-based corrosion inhibitor can prevent further corrosion of the metal.

The invention relates to a semiconductor detector, CT scanning equipment and a detector position error measurement system. The semiconductor detector is applied to CT scanning equipment and comprises a base body structure, the base body structure comprises a semiconductor crystal layer and an electrode layer set, the electrode layer set comprises a planar electrode layer and a pixel electrode layer, the semiconductor crystal layer is provided with a first face and a second face which are oppositely arranged in the thickness direction of the semiconductor crystal layer, and the planar electrode layer is laid on the first face; the pixel electrode layer comprises a plurality of pixel electrodes laid on the second surface at intervals; the protective layer is arranged on at least part of the surface of the base body structure; and the imprinting layer is formed on the side, away from the base body structure, of the protection layer, and the imprinting layer carries imprinting information. According to the semiconductor detector, marks can be engraved on the surface of the semiconductor detector on the premise that the performance of the semiconductor detector is not affected, so that information such as the crystal direction of each semiconductor detector can be quickly identified in the installation process, and the installation efficiency is improved; after the installation is completed, the information of each semiconductor detector can be identified and traced according to the mark information.

The invention provides a method for connecting ceramic / glass and metal through a laser surface modification technology. The method solves the technical problems that an existing ceramic / glass and metal connecting interface is insufficient in infiltration, unmatched in residual stress and physical property and incompatible in metallurgy. Comprising the following steps: S1, cleaning, grinding and polishing a ceramic sheet / glass sheet; s2, coating the precursor solution on the surface of a ceramic sheet / glass sheet, and drying to form a precursor layer; the solute of the precursor solution is easy-to-decompose nitric acid metal salt or precious metal acid salt and a reducing agent, and the solvent is water; s3, after the precursor layer is irradiated by laser, cleaning and drying the ceramic sheet / glass sheet to obtain a surface-modified ceramic sheet / glass sheet; s4, under vacuum, assembling the surface-modified ceramic sheet / glass sheet and the polished metal sheet according to a sequence of ceramic sheet / glass sheet-metal sheet or ceramic sheet / glass sheet-brazing filler metal-metal sheet, overlapping and compressing to form an assembly, and cooling to room temperature; the method can be widely applied to the technical field of ceramic / glass and metal connection.

The application relates to a semiconductor detector, a CT scanning device and a detector position error measurement system. The semiconductor detector is applied to the CT scanning device and comprises a base structure, a protection layer and an engraved layer. The base structure comprises a semiconductor crystal layer and an electrode layer group, the electrode layer group comprises a planar electrode layer and a pixel electrode layer, the semiconductor crystal layer has a first surface and a second surface which are oppositely arranged along the thickness direction of the semiconductor crystal layer, the planar electrode layer is arranged on the first surface, and the pixel electrode layer comprises a plurality of pixel electrodes which are arranged on the second surface at intervals. The protection layer is arranged on at least part of the surface of the base structure. The engraved layer is formed on the side of the protection layer which is away from the base structure, and the engraved layer carries engraved information. The semiconductor detector can be engraved with marks on the surface without affecting the performance of the semiconductor detector, so that the crystal direction and other information of each semiconductor detector can be quickly identified during the installation process, and the installation efficiency is improved. After the installation is completed, the information of each semiconductor detector can be identified and traced according to the mark information.

The present invention relates to a pure crystalline phase nano-sized magnesium titanate ceramic powder material and a preparation method thereof. The material is a nano-sized magnesium titanate ceramic powder with an irregular pure crystalline phase structure. The material particle size is 50-100nm, and the particle size D50 after drying and crushing is less than 100nm. The specific surface area is 2-20m 2 / g. Compared with the prior art, the preparation process of the present invention is simple to operate, does not require additional complex conditions and complex equipment, and can react by stirring at room temperature and pressure. Moreover, the raw materials used are cheap and easy to obtain, so that the preparation cost of the material is relatively low, the particle size is small, and the prepared magnesium titanate can be used for the manufacture of electronic ceramic devices, filter ceramic devices and other purposes.