1results about How to "Change surface state" patented technology

The application relates to a semiconductor detector, a CT scanning device and a detector position error measurement system. The semiconductor detector is applied to the CT scanning device and comprises a base structure, a protection layer and an engraved layer. The base structure comprises a semiconductor crystal layer and an electrode layer group, the electrode layer group comprises a planar electrode layer and a pixel electrode layer, the semiconductor crystal layer has a first surface and a second surface which are oppositely arranged along the thickness direction of the semiconductor crystal layer, the planar electrode layer is arranged on the first surface, and the pixel electrode layer comprises a plurality of pixel electrodes which are arranged on the second surface at intervals. The protection layer is arranged on at least part of the surface of the base structure. The engraved layer is formed on the side of the protection layer which is away from the base structure, and the engraved layer carries engraved information. The semiconductor detector can be engraved with marks on the surface without affecting the performance of the semiconductor detector, so that the crystal direction and other information of each semiconductor detector can be quickly identified during the installation process, and the installation efficiency is improved. After the installation is completed, the information of each semiconductor detector can be identified and traced according to the mark information.