Method for preparing cobalt-doped zinc oxide nanorods through sol-gel

Abstract

The invention discloses a method for preparing cobalt-doped zinc oxide nanorods through sol-gel. The method comprises the steps of dissolving dihydrate zinc acetate and tetrahydrate cobaltous acetate into ethylene glycol monomethyl ether according to the stoichiometric ratio of Zn<1-x>Co<x>O, stirring the mixture uniformly, and obtaining a mixed solution; dropwise adding ethanolamine to the mixed solution, conducting a reaction under the condition that the mixture is stirred at the temperature of 60-80 DEG C, cooling the mixture naturally to the room temperature after the reaction is ended, and obtaining clear cobalt-doped zinc oxide precursor sol; drying the clear cobalt-doped zinc oxide precursor sol, obtaining dried gel, then making the dried gel be subjected to a heat treatment process in the air atmosphere, and obtaining the clear cobalt-doped zinc oxide nanorods. According to the method, the cobalt-doped zinc oxide nanorods are prepared through a multicomponent uniform reaction sol-gel method, and the method has the advantages that the process is simple, the reaction temperature is low, the cost is low, the test process is easy to control, the product crystallinity degree is high, and the crystalline phase is pure, and the obtained clear cobalt-doped zinc oxide nanorods have ferromagnetism at the room temperature.

Description

technical field [0001] The invention relates to a preparation method of transition metal-doped zinc oxide nanorods in dilute magnetic semiconductor materials, in particular to a sol-gel preparation method of cobalt-doped zinc oxide nanorods. Background technique [0002] The dilute magnetic semiconductor material that integrates the spin and charge properties of electrons has attracted widespread attention in the research system of spintronics devices, and is considered to be the most promising solution for the new generation of electronic components using the spin degree of freedom of electrons. important material. ZnO is an important direct bandgap semiconductor functional material, which has a wide bandgap (Eg=3.4eV) and a large exciton binding energy (60meV), good electromechanical coupling performance, stable chemical properties, good Translucency and other characteristics. The transition metal cobalt element has a rich electron shell structure. Through Co doping, the...

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Problems solved by technology

It has been reported that the preparation methods of Co-doped ZnO nanorods mainly include solid-state reaction method, chemical vapor deposition method, hydrothermal method, co-precipitation method, etc., but the reaction temperature of chemical vapor deposition method and solid-phase reaction method is high, and the hydrothermal method The synthesis control is difficult, and the doping concentration of the co-deposition method is low

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