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Semiconductor device

A technology of semiconductors and transistors, applied in the field of shielding electric fields, can solve problems such as the inability to realize the function of components

Inactive Publication Date: 2004-06-16
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, since the voltage generated by the ions exceeds the threshold value of the elements constituting the integrated circuit, and a leakage current path is created between adjacent elements, there is a problem that the functions of the elements cannot be realized.

Method used

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  • Semiconductor device
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  • Semiconductor device

Examples

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no. 1 example

[0035] figure 1 is a cross-sectional view showing the semiconductor device according to the first embodiment of the present invention. The insulating layers 101 , 102 , and 103 are sequentially stacked on the semiconductor substrate 500 . Hereinafter, the direction viewed from the semiconductor substrate 500 toward the insulating layers 101 , 102 , and 103 is referred to as upward, and the opposite direction is referred to as downward. Electrodes 200 , 202 , and 203 are provided on the same layer near the boundary between insulating layers 101 and 102 , and electrode 201 is provided near the boundary between insulating layers 102 and 103 . Such a structure can be realized by, for example, sequentially forming the insulating layer 101 , the electrodes 200 , 202 , 203 , the insulating layer 102 , the electrode 201 , and the insulating layer 103 on the semiconductor substrate 500 . The electrodes 200 to 202 are insulated from each other, and the electrodes 202 and 203 are conne...

no. 2 example

[0058] Figure 5 is a cross-sectional view showing a semiconductor device according to a second embodiment of the present invention. The insulating layers 101 , 102 , and 103 are sequentially stacked on the substrate 500 . An electrode 200 to which a high potential HV is applied is provided near the boundary of the insulating layers 101 and 102, and a floating electrode 201 and electrodes 202 and 203 to which a low potential GND is applied are provided on the same layer near the boundary of the insulating layers 102 and 103. Such a structure can be realized by, for example, sequentially forming insulating layer 101 , electrode 200 , insulating layer 102 , floating electrode 201 , electrodes 202 and 203 , and insulating layer 103 on semiconductor substrate 500 .

[0059] The electrode 200 extends in a direction perpendicular to the paper surface, and the floating electrode 201 covers the upper part of the electrode 200 on the high-potential wiring section. At any position of ...

no. 3 example

[0065] Figure 7 is a cross-sectional view showing a semiconductor device according to a third embodiment of the present invention. The insulating layers 101 , 102 , and 103 are sequentially stacked on the substrate 500 . Near the boundary between insulating layers 101 and 102, electrode 200 for applying high potential HV, floating electrodes 202b and 203, and electrode 202a for applying low potential GND are provided, and floating electrode 201 is provided near the boundary between insulating layers 102 and 103. However, the electrodes 202b and 203 are connected to each other and are arranged on the same layer as the electrode 200 . Such a structure can be realized by, for example, sequentially forming insulating layer 101, electrodes 200, 202a, floating electrodes 202b, 203, insulating layer 102, floating electrode 201, and insulating layer 103 on semiconductor substrate 500.

[0066] The electrode 200 extends in a direction perpendicular to the paper surface, and the floa...

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Abstract

A floating electrode (201) and an electrode (202) are coupled together by an electrostatic capacitance (C1), the floating electrode (201) and an electrode (203) are coupled together by an electrostatic capacitance (C2), and an electrode (200) and the floating electrode (201) are coupled together by an electrostatic capacitance (C3). The potential of the floating electrode (201) is lower than the potential applied to the electrode (200). The floating electrode (201) covers above the electrode (200). For example, as viewed in section, the elevation angles (alpha, beta) of widthwise edges of the electrode (201) from the near widthwise edges of the electrode (200) should preferably be not more than 45 degrees.

Description

technical field [0001] The present invention relates to techniques for shielding electric fields. Background technique [0002] In a semiconductor device in which a resin in a solid or gel state is coated on a semiconductor chip, ions, which are impurities in the resin, move due to an applied voltage and become polarized. In this case, since the voltage generated by the ions exceeds the threshold value of the elements constituting the integrated circuit and creates a leakage current path between adjacent elements, there is a problem that the functions of the elements cannot be realized. These problems are described in Japanese Patent Document 1, for example. [0003] In addition, techniques for reducing electromagnetic wave noise entering other circuit parts from wiring layers are disclosed in Japanese Patent Document 2 and Japanese Patent Document 3, for example. [0004] [Japanese Patent Document 1]: Japanese Unexamined Patent Publication No. 11-204733 [0005] [Japanes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/52H01L21/3205H01L21/822H01L21/8234H01L21/8238H01L23/522H01L23/528H01L23/552H01L23/58H01L23/60H01L27/04H01L27/06H01L27/088H01L27/092H01L29/06H01L29/40H01L29/423H01L29/78
CPCH01L23/5225H01L2924/0002H01L29/7816H01L27/0629H01L23/60H01L29/42368H01L29/404H01L2924/00B25F1/02
Inventor 清水和宏
Owner MITSUBISHI ELECTRIC CORP