Magnetic memory and its drive method, and magnetic memory apparatus using same

A magnetic storage and driving method technology, applied in the field of magnetic storage devices, can solve the problems of impedance rise, magnetization reversal magnetic field recording current increase, recording errors, etc., to suppress refinement, realize magnetization reversal, and smooth magnetization reversal Effect
CN1529910AInactive Publication Date: 2004-09-15PANASONIC CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
PANASONIC CORP
Publication Date
2004-09-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.
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Description

technical field

[0001] The present invention relates to a magnetic memory, a driving method thereof, and a magnetic storage device such as a magnetic random access memory (MRAM) using the memory. Background technique

[0002] A tunnel magnetoresistance (TMR: tunnel magnetoresistance) element includes a tunnel (barrier layer: barrier) layer and a pair of magnetic layers sandwiching the layer. In the TMR element, the spin tunneling effect produced by the relative angle difference of the magnetization direction in a pair of magnetic layers is used. In the spin valve type TMR element, a pair of magnetic layers includes a fixed magnetic layer whose magnetization is hard to rotate and a free magnetic layer whose magnetization is easy to rotate. The free magnetic layer functions as a memory layer, and its information is recorded as a magnetization direction.

[0003] As a magnetic memory, in an MRAM in which TMR elements are arranged in a matrix, as the integration level increase...

Claims

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