Megnetoelectric changing element and its producing method

A manufacturing method and technology of magneto-sensitive elements, which are applied in the manufacture/processing of electromagnetic devices, measurement of magnetic variables, and parts of electromagnetic equipment, etc. problem, to achieve the effect of reducing the manufacturing process, simple structure and high precision

CN1532958AInactive Publication Date: 2004-09-29NIKKOSHI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2004-09-29
Estimated Expiration
Not applicable · inactive patent

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Abstract

To obtain a magnetic sensor unit in which the deviations or the inclinations of magnetic resistance elements and a permanent magnet are low and which has substantially equivalent electric resistance values of magnetic resistance elements, by imparting equivalent magnetic fields to both of a pair of two magnetic resistance elements; and to intend to reduce the changing amount of a mid-point voltage due ot a temperature change. Many magnetic resistance elements are formed on an unmagnetized permanent magnet material, and are cut together with the permanent magnet material accurately by a dicing machine or the like. The magnetic resistance elements divided into a plurality are individually taken out, and the permanent magnet material is magnetized to a permanent magnet. The center of the magnetized permanent magnet material substantially coincides with that of the pair of two magnetic resistance elements, and equivalent magnetic fluxes can be imparted to both of the pair of two magnetic resistance elements.
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Description

technical field

[0001] The invention relates to a magnetoelectric conversion element whose resistance value changes with the change of the magnetic field and its manufacturing method, in particular to a magnetoelectric conversion element capable of identifying the authenticity of the item through the change of the magnetic field of the item and its manufacturing method. Background technique

[0002] At present, it is well known to use a magnetoelectric conversion element (also called a magnetosensitive sensor) composed of a magnetosensitive element such as indium antimonide material InSb (abbreviated as InSb) to detect the magnetism of a paper leaf-shaped medium. Magnetic sensor is a sensor made of semiconductor InSb crystal (hereinafter referred to as MR chip) which is sensitive to magnetic field. It can change the resistance value of MR chip with the change of magnetic field, and detect the change of magnetic field or the presence or absence of magnetic substance. Output i...

Examples

Embodiment Construction

[0043] The inventive point of the present invention is that the magnetoelectric conversion element uses a small permanent magnet as the substrate supporting the magnetic sensitive element that changes with the change of the magnetic field, instead of Figure 4 , Figure 5 In the substrate 31 shown in the prior art, the small permanent magnet not only functions as a substrate, but also acts as a bias magnet.

[0044] With the magnetoelectric conversion element made by the present invention, its structure and positional relationship are as follows: Figure 15 As shown, 11 and 12 are a pair of divided magnetic sensitive elements, and the magnetic sensitive elements can be made of indium antimonide material; Two pairs of divided magnetic sensitive elements 11 , 12 and permanent magnet 122 are glued and fixed on the fixing plate 51 . The fixing plate 51 and the magnetoelectric conversion element are electrically connected by a metal wire 152 . In order to leave a certain distanc...