Improvig technique for reducing defect of metalic wire
A metal wire and defect technology, which is applied in the field of improved technology for reducing metal wire defects, can solve the problems of effective prevention of Al voids, etc., and achieve the effects of reducing Al voids, convenient operation, and simple process flow
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Embodiment 1
[0015] 1. Preparation of Ti / TiN sputtering film: At present, Endura 5500 equipment (Applied Materials, Inc., USA) is commonly used for sputtering in the production line. The upper and lower layers of Ti / TiN (10 / 25nm) films were prepared in a Ti / TiN sputtering chamber by a conventional process.
[0016] 2. Sputtering of the Al layer: In the Al sputtering chamber, the composition of the Al target is Al-Cu, Cu accounts for 1%, the sputtering film thickness is 420 nm; the sputtering temperature is 300°C.
[0017] 3. Annealing temperature: After the metal wire is etched, it needs to be annealed in the furnace, temperature: 440°C, annealing gas: N 2 -H 2 (10%H 2 ). Then HDP-CVD deposited SiO 2 .
Embodiment 2
[0019] 1. The sputtering equipment is the same as Example 1, and the thickness of the upper and lower layers of Ti / TiN is 5 / 30nm.
[0020] 2. The composition of the Al target is Al-Cu, Cu accounts for 0.8%, the sputtering film thickness is 400 nm; the sputtering temperature is 250°C.
[0021] 3. Annealing, the temperature is 460°C, the annealing gas is N 2 -H 2 , H 2 5%. Then HDP-CVD deposited SiO 2 .
Embodiment 3
[0023] 1. The sputtering equipment is the same as Example 1, and the thickness of the upper and lower layers of Ti / TiN is 15 / 20nm.
[0024] 2. The composition of the Al target is Al-Cu, Cu accounts for 1.2%, the sputtering film thickness is 440 nm; the sputtering temperature is 350°C.
[0025] 3. Annealing, the temperature is 420°C, the annealing gas is N2-H2, and H2 accounts for 15%. Then HDP-CVD deposited SiO 2 .
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