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Semiconductor device packaging

A device packaging and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., and can solve the problem that the metal cover 101 is easy to fall off, etc.

Inactive Publication Date: 2004-12-01
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This causes slippage between the taper 102a of the tab unit 102 and the high-frequency circuit substrate 103, resulting in problems that the metal cover 101 is easy to come off and the high-frequency circuit substrate 103 cannot be made thinner.

Method used

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  • Semiconductor device packaging
  • Semiconductor device packaging
  • Semiconductor device packaging

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0041] Figure 4 to Figure 6 A high-frequency semiconductor device package according to a first embodiment of the present invention is shown. Figure 4 is an exploded perspective view of a high-frequency semiconductor device package, Figure 5 is a cross-sectional view of a high-frequency semiconductor device package, and Figure 6 is a partially enlarged cross-sectional view (indicated by a dotted circle) of a high-frequency semiconductor device package.

[0042] A semiconductor device package 10 according to the present invention has a cover 1 and a high-frequency circuit substrate 3 to form a shield case. Also, the semiconductor device package 10 has the device 5 and the chip part 6 formed on the high-frequency circuit substrate 3 and housed in a shield case. The device 5 and the chip part 6 constitute an oscillation circuit. For example, the device 5 includes FETs, and the chip components include chip capacitors, chip resistors, chip inductors, and the like.

[0043] S...

no. 2 example

[0057] Figure 7 A high-frequency semiconductor device package according to a second embodiment of the present invention is shown. exist Figure 7 in, with Figure 6 The same reference numbers shown give similar Figure 6 device in , and a detailed description of the device will be omitted.

[0058] The tab unit 2 has a base portion 2a, a curved portion 2b and a flat portion 2c. Base portion 2 a and planar portion 2 c are formed substantially parallel to the side surface of high frequency circuit substrate 3 . The curved portion 2b connects the base portion 2a and the planar portion 2c. In the current embodiment, as Figure 7 As shown, the tab unit 2 has a "trapezoidal cross-section". The curved portion 2b is also specifically designed to be straight and forms a first angle θ1 with the base portion 2a and a second angle θ2 with the planar portion 2c. Such as Figure 7 As shown, the first angle θ1 is less than 90 degrees, and the second angle θ2 is greater than 90 degr...

no. 3 example

[0063] Figure 8 A high-frequency semiconductor device package according to a third embodiment of the present invention is shown. exist Figure 8 in, with Figure 6 The same reference numbers shown give similar Figure 6 device in , and a detailed description of the device will be omitted.

[0064] In the present embodiment, the tab unit 2 has a stopper portion 2d in addition to the base portion 2a, the bent portion 2b, and the planar portion 2c. Base portion 2 a and planar portion 2 c are formed substantially parallel to the side surface of high frequency circuit substrate 3 . The curved portion 2b connects the base portion 2a and the planar portion 2c. The planar portion 2 c has a first contact surface 11 that contacts the ground electrode 4 .

[0065] Such as Figure 8As shown, the detent portion 2d extends from the planar portion 2c. In the present embodiment, the stopper portion 2d is formed substantially perpendicular to the planar portion 2c. Also, the stopper ...

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PUM

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Abstract

A semiconductor device package includes a substrate, a semiconductor device formed on the substrate, a ground electrode formed on the substrate, a cover designed for covering the semiconductor device, and a tab unit extending from the cover and for holding the substrate. The cover has an outer surface made of conductive material and an inner surface made of insulation material, where the insulating inner surface faces the semiconductor device. The tab unit has a first contact surface which extends from the conductive outer surface and is contact with the ground electrode.

Description

technical field [0001] The present invention relates to packages for high-frequency semiconductor devices such as high-frequency oscillators (HFOs), for example, the oscillation frequency of which belongs to the GHz band, and in particular to semiconductor device packages designed for use in Surface mount shielded housings to prevent electromagnetic interference (EMI) and improve productivity. Background technique [0002] A high-frequency oscillator (HFO) is formed by using a dielectric or a strip line, and is used in devices such as mobile communication devices. In this high-frequency oscillator, electrical influence from the outside easily causes electromagnetic interference (EMI). Accordingly, there is a need for semiconductor device packaging in which semiconductor devices are packaged and shielded. [0003] Japanese Utility Model Patent Application Laid-Open (JP-Heisei 1-165650) discloses an IC package including a cap and a ceramic substrate on which the IC is mounte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K9/00H01L23/02H01L23/043H01L23/552H01L23/66
CPCH01L2924/19105H01L2924/1617H01L23/66H01L2924/19041H01L2924/16152H01L24/48H01L2224/48091H01L23/552H01L2924/3025H01L2224/48227H01L2224/05599H01L2224/45099H01L2224/85399H01L2924/00014H01L2224/45015H01L2924/207E03D11/00E03D9/00E03D2201/20
Inventor 海老原政美
Owner RENESAS ELECTRONICS CORP