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Capacitor type semiconductor pressure sensor

A pressure sensor and semiconductor technology, which is applied in the direction of semiconductor devices, fluid pressure measurement using capacitance changes, electric solid devices, etc., can solve the problem of high cost, reduce processing costs, meet market price requirements, and save costs.

Active Publication Date: 2005-01-26
AU OPTRONICS CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0006] However, the semiconductor substrate 12, diaphragm 14, and base 16 of the conventional capacitive semiconductor pressure sensor 10 are all made of monocrystalline silicon or epitaxial silicon. Although the sensitivity of the measured pressure is high, due to the silicon wafer The cost of forming an epitaxial silicon layer is high. For the highly competitive pressure sensing device market, how to manufacture products with low cost and high quality is an important issue at present.

Method used

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  • Capacitor type semiconductor pressure sensor

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Embodiment Construction

[0012] Please refer to figure 2 , figure 2 It is a schematic cross-sectional view of the capacitive semiconductor pressure sensor 30 of the present invention. Such as figure 2 As shown, the pressure sensor 30 of the present invention mainly includes a non-single crystal silicon substrate 32; a conductive and movable polysilicon diaphragm 34; a polysilicon support member (supporter) 36, which is located on the non-single crystal silicon substrate 32 for fixing The two ends of the polysilicon diaphragm 34 form a closed recess 38 between the polysilicon diaphragm 34 and the non-single crystal silicon substrate 32; a fixed electrode 40 is arranged in the non-single crystal silicon substrate 32 below the polysilicon diaphragm 34, and the polysilicon diaphragm 34 and the fixed electrode 40 are respectively used as the upper and lower electrodes of the plate capacitance of the pressure sensor 30; and a control circuit, such as a thin film transistor (thinfilm transistor, TFT) co...

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Abstract

The invention is a capacitive semiconductor pressure sensor, mainly containing a plate capacitor composed of metal fixed electrode and a movable polycrystalline silicon diaphragm and arranged on a non-monocrystalline silicon substrate; and a thin film transistor (TFT) control circuit, connected to the plate capacitor to control operation for the pressure sensor.

Description

technical field [0001] The invention relates to a pressure sensor, especially a capacitive semiconductor pressure sensor manufactured on a non-single crystal silicon insulating substrate, so as to save manufacturing cost. Background technique [0002] Air pressure or hydraulic pressure measurement is a very important part of industrial control. Generally speaking, there are many sources and methods of pressure measurement, and there are different design methods and considerations for various fields of application or special needs. Currently, pressure sensor design methods mainly include piezoresistive, piezoelectric, capacitive, potentiometer, inductive bridge, strain gauge, and semiconductor pressure sensors. Among them, capacitive pressure sensors have gradually attracted attention in the market due to their advantages of high sensitivity and insusceptibility to external environmental influences. [0003] In addition, due to the substantial reduction in the size of vario...

Claims

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Application Information

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IPC IPC(8): B81B7/00G01L9/12H01L27/00H01L49/00
Inventor 杨健生
Owner AU OPTRONICS CORP
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