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Low temperature dielectric deposition using aminosilane and ozone

A technology of aminosilane and ozone, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve problems such as limiting usefulness

Inactive Publication Date: 2005-07-20
AVIZA TECHNOLOGY INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, HDP chemical vapor deposition has drawbacks that limit its usefulness

Method used

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  • Low temperature dielectric deposition using aminosilane and ozone

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Embodiment Construction

[0012] The present invention provides a novel low thermal budget method, that is, a method of depositing a dielectric layer or film on a semiconductor substrate by chemical vapor deposition (CVD) at a temperature lower than or equal to about 400°C. In one embodiment of the invention, the CVD reaction can be summarized by the following equation:

[0013] (1)

[0014] The silicon precursor is Si(NR 1 R 2 ) 4 , R 1 Or R 2 H, C 1 -C 6 Alkyl, cycloalkyl, F-substituted alkyl, or Si(NR 1 R 2 ) 4-x L x (X=1, 2 or 3), where L=H or Cl.

[0015] In equation (1), the Si-N bond in the aminosilane and the alkylamido-based silicon compound (hereinafter referred to as "silicon precursor") is unstable. Compared with other silicon-containing precursors, the bond reacts with the oxidant gas at a lower temperature. The preferred silicon precursors in this type of compound have smaller R groups, such as methyl ethyl amide groups. The reaction is carried out in a reactor or chamber ...

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Abstract

This invention describes a method of depositing dielectric layers or films with good step coverage and ability to fill high-aspect ratio device structures at low temperature (20 - 400 C) by CVD processes through the use of aminosilane or silicon alkylamide compounds as the silicon precursor with an oxidizerthat includes ozone. The present invention further provides a method of depositing silicon oxynitride (SiON) films at low temperatures using aminosilane or silicon alkylamide compounds as a silicon precursor, with an oxidizer that includes ozone, and ammonia (NH<3>).

Description

[0001] Cross-reference of related applications [0002] The present invention relates to and claims the priority of US provisional patent application 60 / 396,746 filed on July 19, 2002, titled "Low Temperature Dielectric Deposition Using Aminosilane and Ozone", the entire disclosure of which is incorporated herein by reference. Invention field [0003] The present invention mainly relates to the field of semiconductors. More specifically, the present invention relates to chemical vapor deposition on semiconductor devices and wafers. Background of the invention [0004] In the manufacture of semiconductor devices, low-pressure thermal chemical vapor deposition (CVD) produces a premetal dielectric film with good step coverage characteristics and acceptable gapfill aspect ratio (aspect ratio). film). When some precursors, such as bis(tetrabutylamino)silane (BTBAS) and Et2SiH2 are reacted with oxygen O2 by chemical vapor deposition (CVD) at about 400°C, these precursors produce SiO2. H...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/42C23C16/30C23C16/44H01L21/318H01L21/768H01L23/522
CPCH01L21/02274C23C16/308H01L21/0214H01L21/02219
Inventor 千崎佳秀
Owner AVIZA TECHNOLOGY INC