Measuring method for silicon sheet binding strength

A technology of bonding strength and measurement method, which is used in measurement devices, testing material strength by applying stable shear force, special data processing applications, etc. Measurement environment requires advanced issues

Inactive Publication Date: 2005-08-03
HARBIN INST OF TECH
View PDF0 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

None of them can quantitatively give the bonding strength value, the measurement environment requires high requirements, the measurement results are unreliable, and it is difficult to realize
Moreover, the measurement data are obtained under different process conditions, sample sizes and measuring instruments, lacking versatility and authority

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measuring method for silicon sheet binding strength
  • Measuring method for silicon sheet binding strength
  • Measuring method for silicon sheet binding strength

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0005] Specific implementation mode one: combine figure 1 Illustrate present embodiment, its measurement step is: measure the thickness t of wafer 1-1 in bonding silicon wafer 1 respectively w1 , the thickness t of wafer 1-2 w2 001; insert the blade 2 into the bonding surface of the wafer 1-1 and the wafer 1-2 at a constant speed, and insert the edge of the blade 2 into the bonding surface completely, and partly separate the wafer 1-1 from the wafer 1-2; Thickness t b 100 μm ~ 230 μm; the blade line of the blade 2 is parallel to the bonding surface of the wafer 1-1 and the wafer 1-2 002; the length value L 003 of the crack 3 in the separation part of the wafer 1-1 and the wafer 1-2 is measured, and its measurement method Yes: according to the transmission characteristics of the infrared spectrum, one side of the silicon wafer 1 is irradiated with an infrared light source 4, and the length value L of the crack 3 is measured on the other side of the silicon wafer 1 through an...

specific Embodiment approach 2

[0007] Specific implementation mode two: combination figure 1 Describe this embodiment, the difference between this embodiment and specific embodiment 1 is that in step 002, the thickness t of the blade 2 b is 120 μm.

specific Embodiment approach 3

[0008] Specific implementation mode three: combination figure 1 Describe this embodiment, the difference between this embodiment and specific embodiment 1 is that in step 002, the thickness t of the blade 2 b is 160 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to measurement technology of material bonding strength. The measurement of silicon chip bonding strength includes the following steps: measuring the thickness of two bonded silicon chips separately; inserting blade of 100-230 micron thickness into the bonding surface of two silicon chips with the edge being inserted into the bonding surface completely to separate two bonded silicon chips partially and the edge line of the blade being parallel to the bonding surface; measuring the length of the separated part between two silicon chips; and calculating the bonding strength based on the principle that the elastic force to separate the bonded chip part and the bonding force in the cracked top are balanced. The present invention completes the quantitative measurement of bonding strength, and measurement method is simple, reliable, relaxed in environment requirement, universal and accurate.

Description

Technical field: [0001] The invention relates to the technical field of material bonding strength measurement, in particular to a method for measuring the bonding strength of a silicon wafer. Background technique: [0002] Silicon wafer bonding technology can organically combine surface processing and bulk processing, and plays an important role in micromachining. The measurement of bonding strength is a key issue in evaluating the quality of silicon wafer bonding technology. In our country, the most commonly used measurement methods include: static liquid oil pressure method, Czochralski method, etc. Among them, the static liquid oil pressure method has an important application in the design of the sensor, but due to the complex structure of the interface pressure, the specific details of the bonding sheet cannot be obtained; the straight pull method uses the maximum pulling force of the bonding sheet to indicate the bonding Strength, but this method is limited by the adh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/02G01N3/24G01N19/00
Inventor 孙立宁陈立国黄庆安陈涛
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap