Single-mode green light laser of semiconductor pumping

A technology of semiconductors and lasers, which is applied in the field of single-mode high-power frequency-doubling green lasers, can solve problems such as the application limitations of harmonic laser fine processing, and achieve the effect of balancing thermal lens effects and improving quality

Inactive Publication Date: 2005-11-09
上海致凯捷激光科技有限公司
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the application of harmonic lasers in fine processing is limited to a certain extent.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single-mode green light laser of semiconductor pumping
  • Single-mode green light laser of semiconductor pumping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Below in conjunction with embodiment the optical path schematic diagram of the single-mode green laser of the semiconductor pump of the present invention is further described: by figure 1 It can be seen that the semiconductor-pumped single-mode green laser in this embodiment includes a solid-state laser medium 5, an optical pump 8 composed of a laser diode, and the like. The light pumping light sent from the laser diode is coupled to the laser medium 5, and the laser is stimulated and amplified in the device 6, the laser resonator composed of lenses 1-4, the Q-switching switch device 7 and the frequency doubling crystal resonator, and the resulting high Power density The fundamental wave in the cavity acts on the frequency-doubling crystal 8 to form a high-power and high-density frequency-doubling green laser output. Each component is described in further detail below:

[0024] The solid-state laser medium 5 used in this embodiment is a medium capable of generating las...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention discloses a large power semiconductor pump single mode frequency doubled green light laser including a 1064nm basic wave laser medium, an optical pump device, a resonant cavity composed of a plane and a convex mirror, a Q-switching device and a frequency-doubled crystal, among which, a pair of mirrors making up of a hole-expanded telescope is set in the cavity to form a 'Z' like cavity structure together with said plane and convex mirrors, besides, the beam expanding end of said telescope faces the laser medium, and its contraction hole end faces the frequency-doubled crystal, which can increase the quality of laser beams and the frequency doubled efficiency of nm-linear crystals.

Description

technical field [0001] The invention relates to a solid-state frequency-doubled laser, in particular to a single-mode high-power frequency-doubled green laser pumped by a semiconductor laser. Background technique [0002] Traditionally, most solid-state laser devices and laser processing machines are lamp-pumped lasers. The pump lamp is mostly a continuous broad-spectrum light source from ultraviolet to infrared, and the absorption peaks of laser media such as Nd:YAG (abbreviation of neodymium ion yttrium aluminum garnet) are 560-600nm, 720-770nm and 780-820nm Three narrow bands, therefore, a large amount of unabsorbed pump light will heat the Nd:YAG rod and the pump cavity, making the Nd:YAG form a severe and unstable thermal lens effect. Longitudinal unstable thermal lens effect causes the laser to produce multi-mode, pulse width broadening and power instability; transverse thermal lens effect causes the solid laser medium to generate a large thermal gradient, forming tan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/08
Inventor 金英杰施伟
Owner 上海致凯捷激光科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products