Method and system of preparing ITO film using medium frequency reaction magnetic controlled sputtering indium tin alloy target

A reactive magnetron sputtering, indium tin alloy technology, applied in sputtering plating, metal material coating process, ion implantation plating, etc. The effect of material utilization rate, production cost reduction and stability improvement

Active Publication Date: 2006-01-11
深圳豪威显示科技有限公司
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Problems solved by technology

At present, the DC magnetron sputtering method is generally used, and most of the relatively expensive sintered ITO (indium tin oxide) ceramic targets are used. Poisoning of the target often occurs during production, and the chemical composition of the film is not convenient. Adjustment
In addition, radio frequency sputtering is also used, but radio frequency sputtering has strict requirements on equipment and high cost
[0003] Usually, when reactive sputtering is not controlled, the partial pressure of reactive gas oxygen cannot be adjusted in time, and insufficient or excessive reactive gas oxygen components will affect the composition of ITO, which makes the preparation performance stable. The high quality ITO (Indium Tin Oxide) film brings difficulties

Method used

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  • Method and system of preparing ITO film using medium frequency reaction magnetic controlled sputtering indium tin alloy target

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Embodiment Construction

[0020] Attached below figure 1 The present invention is described in further detail:

[0021] A method for preparing an ITO film by using an intermediate frequency reactive magnetron sputtering indium tin alloy target, comprising the steps of:

[0022] 1) Set the indium-tin alloy twin target and the substrate to be coated in a vacuum chamber with a working pressure of 0.3-0.6Pa;

[0023] 2) Connect the indium tin alloy twin target to the intermediate frequency power supply;

[0024] 3) Introduce the preset reaction gas oxygen and working gas argon into the vacuum chamber to form a plasma region between the indium tin alloy target and the substrate to be coated, so that the indium tin particles are sputtered from the indium tin alloy target come out;

[0025] 4) The deposition process is carried out when the substrate temperature is controlled below 120° C. through the cooling system in the substrate clamping device.

[0026] 5) Using an optical probe to detect the specific...

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Abstract

A process for preparing ITO film by magnetically controlled MF sputtering to InSn alloy target includes such steps as arranging InSn alloy target and the substrate to be plated in vacuum chamber, connecting said target to MF power supply, introducing working gas and reacting gas to the vacuum chamber for generating a plasma region between target and substrate and sputtering the target to release InSn particles, detecting the particular spectrum intensity of In at 451 nm, filtering, intensifying and amplifying it, comparing it with that of working gas, and regulating the flow of reacting gas according to the comparison result for oxidizing reaction of InSn particles and depositing them on substrate.

Description

technical field [0001] The invention relates to a vacuum coating technology, in particular to a method and system for preparing an ITO film. Background technique [0002] ITO (Indium Tin Oxide) film has excellent electrical conductivity and visible light transmittance, is an important transparent conductive film, and has been widely used in optoelectronic devices. There are various methods for preparing ITO (indium tin oxide) films. At present, the DC magnetron sputtering method is generally used, and most of the relatively expensive sintered ITO (indium tin oxide) ceramic targets are used. Poisoning of the target often occurs during production, and the chemical composition of the film is not convenient. Adjustment. In addition, radio frequency sputtering is also used, but radio frequency sputtering has strict requirements on equipment and high cost. [0003] Usually, when reactive sputtering is not controlled, the partial pressure of reactive gas oxygen cannot be adjuste...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 许生许沭华谭晓华段永利梁红戚祖强徐升东
Owner 深圳豪威显示科技有限公司
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