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Method of forming semiconductor devices through epitaxy

A semiconductor, single crystal semiconductor layer technology, applied in the manufacture of semiconductor/solid-state devices, microstructure devices composed of deformable elements, piezoelectric devices/electrostrictive devices, etc. Issues such as bumps or device thickness

Inactive Publication Date: 2006-02-08
FREESCALE SEMICON INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

While this method can be quite effective in forming anti-stiction protrusions, processing variations in the wet etch step often lead to inconsistent protrusion or device thickness, and consequent variations in device performance

Method used

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  • Method of forming semiconductor devices through epitaxy
  • Method of forming semiconductor devices through epitaxy
  • Method of forming semiconductor devices through epitaxy

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Embodiment Construction

[0019] It has now been found that the aforementioned and apparently dissimilar problems can be solved by using fused lateral overgrowth of epitaxial silicon to form electrical contact with the handle wafer and to form anti-stiction protrusions. In particular, it has been found that MEMS structures with electrical contact to the substrate and with high surface planarity can be fabricated on SOI wafers and other substrates by utilizing fused lateral overgrowth of epitaxial silicon. In this method, the starting wafer is a silicon handle wafer on which is disposed a thick sacrificial layer and a thin monocrystalline semiconductor layer (typically about 0.1 to about 0.5 microns thick). The semiconductor layer is patterned with small openings. The semiconductor layer and sacrificial layer are then etched down to the handle silicon in these openings, after which the semiconductor layer is grown to the desired device thickness in an epitaxial reactor. During growth, silicon grows ver...

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Abstract

A method for creating a semiconductor structure is provided. In accordance with the method, a semiconductor substrate (101) is provided over which is disposed a sacrificial layer (103), and which has a thin single crystal semiconductor layer (105) disposed over the sacrificial layer (103). An opening (107) is then created which extends through the semiconductor layer (105) and into the sacrificial layer (103). The semiconductor layer (105) is then epitaxially grown to a suitable device thickness, thereby resulting in a device layer. The semiconductor layer is grown such that the resulting device layer extends over the opening (107), and such that the surface of the portion of the device layer extending over the opening is single crystal silicon.

Description

technical field [0001] The present invention relates generally to microfabrication techniques, and more particularly to methods of fabricating MEMS devices. Background technique [0002] Advances in micromachining and other microfabrication techniques and methods have allowed the fabrication of a wide range of microelectromechanical systems (MEMS) and devices. These include moving rotors, gears, switches, accelerometers, miniaturized sensors, drive trains, and other such structures. [0003] One popular method of forming MEMS devices utilizes modified wafers known as silicon-on-insulator (SOI) wafers. An SOI wafer is basically a silicon wafer on which a silicon dioxide sacrificial layer is disposed and an active single crystal silicon film is disposed on the sacrificial layer. [0004] MEMS devices fabricated on SOI wafers have many advantages. The formation of MEMS devices on such wafers takes place in single crystal silicon of very high mechanical quality. Thus, compon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00H01L21/00H01L21/20H01L21/36
CPCB81C2201/0177B81B3/0013B81B3/001B81C2201/0109H01L21/20
Inventor 比什努·戈戈伊
Owner FREESCALE SEMICON INC