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Production of crystal layer with nitride and its structure

A technology of nitride epitaxy and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as deterioration of component characteristics, shortened life, and excessive difference in lattice constants

Active Publication Date: 2006-03-15
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large difference between the lattice constant of GaN and the lattice constant of the substrate, the defect density of GaN grown using this low-temperature buffer layer is as high as 10 10 / cm 3 above
The light-emitting diode structure made of such gallium nitride material will make the ESD withstand voltage of the component too low, resulting in a shortened life span and degraded component characteristics.

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  • Production of crystal layer with nitride and its structure
  • Production of crystal layer with nitride and its structure
  • Production of crystal layer with nitride and its structure

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Embodiment Construction

[0015] The preferred embodiments of the present invention will be further described in detail below with reference to the attached reference numerals. Some dimensions are shown exaggerated relative to other parts to provide a clearer description and to help those skilled in the art understand the present invention.

[0016] figure 1 Shown is a preferred embodiment of the nitride epitaxial layer of the present invention, figure 2 shown as figure 1 A flowchart of specific implementation steps of the nitride epitaxial layer. refer to figure 1 As shown, it is a nitride composed of a first interposer layer 102, a second interposer layer 103 and a nitride epitaxial layer 104 formed by sequentially stacking and forming on a substrate 101, and the second interposer layer 103 is used for The surface of the first interposer 102 forms a cluster (cluster) shield (mask), so that the subsequently grown nitride epitaxial layer 104 will grow from the exposed first interposer 102 and deve...

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Abstract

Its structure is comprised of a baseboard used as base material, at least one first intermediate layer formed by stacking All-x-yGaxInyN on base material, at least one second intermediate layer formed by stacking SixNy or MgxNy on the first intermediate layer, and a nitride epitaxy layer formed by stacking nitride material on top first intermediate layer or second intermediate layer. The next epitaxy layer is formed on second intermediate layer to shield epitaxy growth in order to reduce amount of defect lattice and improve quality of epitaxy layer.

Description

technical field [0001] The present invention relates to a method for manufacturing a nitride epitaxial layer and its structure, in particular to provide a special interlayer structure and its manufacturing process. Background technique [0002] The traditional gallium nitride (GaN) epitaxial layer is to form a buffer layer (buffer layer) on a substrate (substrate), and a nitride epitaxial layer is formed on the buffer layer, wherein, generally, this type of buffer layer is Using a low-temperature (200-900°C) Al x Ga 1-x N or low temperature In x Ga 1-x The N material is deposited, and then the high-temperature gallium nitride is grown. However, due to the large difference between the lattice constant of GaN and the lattice constant of the substrate, the defect density of GaN grown using this low-temperature buffer layer is as high as 10 10 / cm 3 above. The light-emitting diode structure made of such gallium nitride material will cause the ESD withstand voltage of the ...

Claims

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Application Information

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IPC IPC(8): H01L21/18
Inventor 温子稷涂如钦游正璋武良文简奉任
Owner EPISTAR CORP