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Method for fabricating semiconductor device using tungsten as sacrificial hard mask

A hard mask and semiconductor technology, applied in the manufacture of semiconductor/solid-state devices, components for photomechanical processing, instruments, etc., can solve the problems of difficult-to-achieve devices and mask patterning processes, etc.

Active Publication Date: 2006-04-19
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the final CD of the etch target becomes larger than the required CD
Also, there are limitations in reducing the CD of the scale applied in the peripheral region
If the CD of the peripheral area is too small, the mask patterning process cannot be realized. On the other hand, if the ID deviation is reduced, it is difficult to realize the required level of device

Method used

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  • Method for fabricating semiconductor device using tungsten as sacrificial hard mask
  • Method for fabricating semiconductor device using tungsten as sacrificial hard mask
  • Method for fabricating semiconductor device using tungsten as sacrificial hard mask

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Embodiment Construction

[0038] A method of manufacturing a semiconductor device using tungsten as a sacrificial hard mask according to a preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

[0039] figure 2 A cross-sectional view showing a photoresist pattern for forming a gate structure using a tungsten-based sacrificial hard mask according to the present invention.

[0040] As shown in the figure, a gate insulating layer 101 , a gate conductive layer 102 and a nitride layer 103 for a hard mask are sequentially formed on a substrate 100 . On the nitride layer 103, a tungsten layer 104 for a sacrificial hard mask, an anti-reflection coating 105 and a photoresist pattern 106 are sequentially formed.

[0041] To form the gate structure, the tungsten layer 104 is etched using the photoresist pattern 106 as an etch mask, thereby forming a sacrificial hard mask, which is then used as an etch mask to etch the bottom etch target layer...

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Abstract

The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device; more particularly, the present invention relates to a method by using a method similar to F 2 and methods for patterning semiconductor devices with advanced light sources of ArF. Background technique [0002] Photolithography is an advanced fine fabrication process that has contributed to the amazing progress of current semiconductor devices. In particular, improvement in the resolution of photolithography is a key factor for advancing the scale of integration of semiconductor devices. [0003] As is well known, photolithography includes a process of forming a photoresist pattern and a process of forming a desired pattern such as a line pattern (for example, a contact hole and a gate structure) by etching an etching target using the photoresist pattern as an etching mask. . Here, the photoresist pattern is formed through a continuous process including: a process for f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/3065H01L21/768G03F1/00G03F7/00
CPCH01L21/0276H01L21/0337H01L21/31144H01L21/76802
Inventor 金光玉曹允硕文承灿郑镇基李圣权宣俊劦李东德金镇雄尹奎汉
Owner SK HYNIX INC