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High-pressure device for crystal growth

A high-pressure device, a technology for growing crystals, applied in the process of applying ultra-high pressure and other directions, can solve problems such as the danger of gas pressure vessels

Inactive Publication Date: 2006-05-24
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, gas pressure vessels are dangerous, especially when working at a pressure greater than 5kbar

Method used

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  • High-pressure device for crystal growth
  • High-pressure device for crystal growth
  • High-pressure device for crystal growth

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0069] Example 1 - Chamber of prior art

[0070] As described in U.S. Patent Application Publication No. 2003 / 0141301, a 0.5-inch-diameter silver airtight chamber is filled with polycrystalline gallium nitride (three seeds, each weighing 3-4 mg), ammonium fluoride, and ammonia, and sealed. . As described in US Patent Application Publication No. 2003 / 0140845 and shown in Figures 1 and 2, a sealed airtight chamber is placed in a chamber in a zero-shock HP / HT device.

[0071] At the bottom of the chamber, the airtight compartment is isolated from steel end caps by sodium chloride plugs with a height of 0.934 inches. At the top of the chamber, the airtight compartment is insulated from steel end caps by a sodium chloride plug with a height of 0.624 inches. The end caps are cooled by heat conduction to the water-cooled anvil, so the top of the vessel is cooler than the bottom of the vessel during HP / HT operation due to the thinner NaCl insulation.

[0072] The airlock can be h...

example 2

[0076] Example 2 - Device of the invention

[0077] As in Example 1, a silver airlock was filled with polycrystalline gallium nitride, a seed crystal, ammonium fluoride, and ammonia and placed in a chamber. However, if image 3 As shown, in addition to having a graphite heating element extending from the top to the bottom of the chamber, an annular graphite disk is located at the vertical midpoint of the chamber with its inner diameter in contact with the heating element and its outer diameter in contact with the mold wall.

[0078] Such as Figure 15 As shown, the airtight chamber is heated from room temperature to about 700°C by passing electric current through the graphite tube heater. As in Example 1, the amount by which the top of the airlock is cooler than the bottom of the airlock is approximately proportional to the difference between the average temperature of the airlock and room temperature.

[0079] Once the bottom temperature reaches 700°C, current flows throu...

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Abstract

A high temperature / high pressure device for converting feedstock contained in an airtight chamber into product crystals includes at least two electrical heating paths for independently controlling the average temperature and temperature gradient within the reaction chamber.

Description

technical field [0001] The present invention relates generally to high pressure / high temperature (HP / HT) apparatus and methods for semiconductor crystal growth; more particularly, to HP / HT apparatus and methods that can independently control average temperature and temperature gradient. Background technique [0002] As described in U.S. Patent Application Publication No. 2003 / 0140845, conventional high pressure / high temperature (HP / HT) apparatuses are known in the art for the preparation of materials such as diamond, cubic boron nitride (CBN), hexagonal boron nitride (HBN) , semiconductor crystals (such as gallium nitride (CaN) crystals) and the like. [0003] HP / HT devices including containers or cell assemblies can be belt, die, belt / die or zero impact as described in U.S. Patent Nos. 2941241, 4523478, 6375446, the contents of which are incorporated by reference is combined here. It is not uncommon for these types of HP units to contain pressures as high as 800,000 to 1,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J3/06
Inventor 马克·P·德弗林小罗伯特·V·莱昂内里彼得·S·阿利森克里斯蒂·J·纳兰罗伯特·A·吉丁斯
Owner GENERAL ELECTRIC CO
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