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Coating composition, porous siliceous film, method for preparing porous siliceous film, and semiconductor device

A composite, porous silicon technology, applied in semiconductor/solid-state device manufacturing, coating, silicon oxide, etc., can solve problems such as elastic modulus limitation

Inactive Publication Date: 2006-05-31
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Of course, the porous siliceous film has the effect of suppressing the increase in the relative permittivity with the lapse of time caused by hygroscopicity, but on the other hand, in the porous film, the elastic modulus is still limited to not more than 3 GPa (at When the relative permittivity is about 2.2)

Method used

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  • Coating composition, porous siliceous film, method for preparing porous siliceous film, and semiconductor device
  • Coating composition, porous siliceous film, method for preparing porous siliceous film, and semiconductor device
  • Coating composition, porous siliceous film, method for preparing porous siliceous film, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0078] The following examples further illustrate the invention. In the following examples, the physical properties of siliceous films were evaluated by the following methods.

[0079] (Relative dielectric constant) A Pyrex (registered trademark) glass plate (thickness 1mm, size 50mm×50mm) produced by Corning Inc. 2 SO 4 The aqueous solution is sequentially rinsed and then dried. An Al film (0.2 µm) was formed on the entire surface of the glass plate by vacuum vapor deposition. The composition solution was spin-coated on the glass plate to form a film, and then the four corners of the glass plate were rubbed with a cotton swab to remove the polyalkylsilazane film (about 3 mm×3 mm) for electrode signal acquisition. Subsequently, the film was converted into a siliceous film according to the methods in Examples or Comparative Examples. A SUS mask was placed on the silicon film thus formed, and an Al film (18 patterns with a size of 2 mm x 2 mm square and a thickness of 2 μm) w...

reference example 1

[0089] Reference Example 1 [Synthesis of polymethylsilazane (1)]

[0090] A stainless steel tank for raw material supply was installed on a stainless steel tank reactor with an internal volume of 5 L. The air in the reactor was replaced with dry nitrogen. Thereafter, 780 g of methyltrichlorosilane was put into a stainless steel tank for raw material supply and fed by nitrogen pressure and introduced into the reaction tank. Next, a raw material supply tank containing pyridine was connected to the reactor, and 4 kg of pyridine was supplied with nitrogen pressure in the same manner as described above. Adjust the pressure of the reactor to 1.0kg / cm 2 , and the temperature was adjusted so that the temperature of the mixed solution in the reactor reached -4°C. Ammonia is blown into the mixed solution while stirring, and when the pressure of the reactor reaches 2.0kg / cm 2 When, stop the supply of ammonia. The vent line was opened to reduce the pressure in the reactor, and, next,...

reference example 2

[0091] Reference Example 2 [Synthesis of polymethylsilazane (2)]

[0092] In addition to using a mixture of 720 g (about 4.8 mol) of methyltrichlorosilazane and 65 g (about 0.5 mol) of dimethyldichlorosilazane (methylchlorosilane: dimethyldichlorosilane = 95:10 (mol / mol)) was used as a raw material instead of 780 g of methyltrichlorosilazane, and polymethylsilazane (about 370 g) was synthesized in the same manner as in Reference Example 1. By GPC (developing solution: CHCl 3 ) of the polymethylsilazane thus obtained was measured and found to have a molecular weight of 1400 in terms of polystyrene. In the IR (infrared absorption) spectrum of this polymethylsilazane, in the wave number (cm -1 ) at 3350 and about 1200 attributable to N-H; at 2900 and 1250 attributable to Si-C; and at 1020-820 attributable to Si-N-Si absorb.

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Abstract

Provided is a porous silicon film having a high mechanical strength and a low dielectric constant suitable for an interlayer insulating film. The coating composition according to the present invention is characterized in comprising: an organic solvent and 1) a polyalkylsilazane contained in said organic solvent and 2) at least one organic resin component selected from the group consisting of The group consisting of homopolymers and copolymers of acrylates and methacrylates, the group -COOH and / or the group -OH is contained in at least part of the side groups contained in at least one of the organic resin components.

Description

technical field [0001] The present invention relates to a porous siliceous film having a low dielectric constant, a semiconductor device comprising the porous siliceous film, and a coating composition for providing the porous siliceous film. Background technique [0002] For electronic materials such as interlayer insulating films for semiconductors, increasing integrated circuit speeds and increasing integration densities lead to the need for further lowered dielectric constants, and it has been known that making the films porous is essential for lowering the relative dielectric of siliceous films. Constants are very efficient. Silicone films are generally hygroscopic, and in external environments, disadvantageously, the relative permittivity increases with the passage of time. [0003] Another method of producing an organosilicon film by firing an organopolysilazane and making the organosilicon film porous is considered to be effective in preventing an increase in the rel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D133/06C09D183/16C01B33/12C08L33/06C09D1/00H01L21/316H01L21/768
CPCC08L33/06C09D183/16H01L21/02126H01L21/02203H01L21/02222H01L21/02282C08L2666/04H01L21/31695
Inventor 青木伦子青木宏幸
Owner MERCK PATENT GMBH
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