Salicide process and method of fabricating semiconductor device using the same

Abstract

The method of forming the metal silicide layer includes a convection (or conduction) based annealing step to convert the metal layer into a metal silicide layer. These methods may include: forming a silicon layer on a substrate; and forming a metal layer (eg, a nickel layer) in contact with the silicon layer. Then, a step of converting at least part of the metal layer into a metal silicide layer is performed. The transforming step includes exposing the metal layer to a heat transfer gas (eg, argon, nitrogen) in a convective or conductive heating device.

Description

[0001] Reference to Priority Patent Application [0002] This patent application claims priority from Korean Patent Application No. 2004-62632 filed on Aug. 9, 2004, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a method for manufacturing a semiconductor device, and more particularly, the present invention relates to a salicide process and a method for manufacturing a semiconductor device using the salicide process. Background technique [0004] Discrete devices such as MOS transistors are widely used as switching devices in integrated circuits. As integrated circuits become more integrated, MOS transistors are also getting smaller. Therefore, the channel length of each MOS transistor is shortened, and this shortening may cause a short-channel effect. In order to prevent the short channel effect from occurring, the junction depth of the source region and the drain region of the MOS transistor an...

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Problems solved by technology

That is, the formation of a nickel silicide layer using RTP requires a fast lamp rate and undesired annealing temperature fluctuations, which may lead to damage to the layer surface, and thus deteriorate the electrical properties of semiconductor devices having a nickel silicide layer

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