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Salicide process and method of fabricating semiconductor device using the same

一种处理过程、退火过程的技术，应用在半导体器件、半导体/固态器件制造、晶体管等方向，能够解决恶化半导体器件电性能、破坏层表面等问题

Inactive Publication Date: 2006-06-21
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the formation of a nickel silicide layer using RTP requires a fast lamp rate and undesired annealing temperature fluctuations, which may lead to damage to the layer surface, and thus deteriorate the electrical properties of semiconductor devices having a nickel silicide layer

Method used

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  • Salicide process and method of fabricating semiconductor device using the same
  • Salicide process and method of fabricating semiconductor device using the same
  • Salicide process and method of fabricating semiconductor device using the same

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Embodiment Construction

[0020] The present invention will now be described more fully with reference to the accompanying drawings, which show preferred embodiments of the invention. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Throughout the specification, the same reference numbers designate the same elements.

[0021] figure 1 is a process sequence diagram showing a halide process and a method of manufacturing a semiconductor device using the halide process according to an embodiment of the present invention. also, figure 2 6 to 6 are cross-sectional views illustrating a halide treatment process and a method of manufacturing a semiconductor device usin...

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Abstract

The method of forming the metal silicide layer includes a convection (or conduction) based annealing step to convert the metal layer into a metal silicide layer. These methods may include: forming a silicon layer on a substrate; and forming a metal layer (eg, a nickel layer) in contact with the silicon layer. Then, a step of converting at least part of the metal layer into a metal silicide layer is performed. The transforming step includes exposing the metal layer to a heat transfer gas (eg, argon, nitrogen) in a convective or conductive heating device.

Description

[0001] Reference to Priority Patent Application [0002] This patent application claims priority from Korean Patent Application No. 2004-62632 filed on Aug. 9, 2004, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a method for manufacturing a semiconductor device, and more particularly, the present invention relates to a salicide process and a method for manufacturing a semiconductor device using the salicide process. Background technique [0004] Discrete devices such as MOS transistors are widely used as switching devices in integrated circuits. As integrated circuits become more integrated, MOS transistors are also getting smaller. Therefore, the channel length of each MOS transistor is shortened, and this shortening may cause a short-channel effect. In order to prevent the short channel effect from occurring, the junction depth of the source region and the drain region of the MOS transistor an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/321H01L21/28H01L21/336
CPCH01L21/28518H01L29/665H01L29/6659H01L29/7833H01L21/18H01L21/24
Inventor 郑硕祐崔吉铉尹钟皓卢官钟郑恩志金贤洙
Owner SAMSUNG ELECTRONICS CO LTD