Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor switch arrangement

A technology of power semiconductors and switches, applied in the field of power electronics, can solve the problems of increasing manufacturing costs, imposing synchronization and affinity of drive units, etc., achieving high cost efficiency, ensuring uniform dynamic current distribution, and optimizing balance.

Inactive Publication Date: 2006-06-21
HITACHI ENERGY LTD
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this imposes stringent requirements on the synchronization and affinity of the drive units, which in turn leads to increased manufacturing costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor switch arrangement
  • Semiconductor switch arrangement
  • Semiconductor switch arrangement

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] figure 2 An electronic circuit according to the invention is shown with three IGBTs T connected in parallel as power semiconductor switches i , where i∈{1, 2, 3}. The latter can be switched synchronously by means of the common drive unit 20 . To this end, the drive signal generated by the common drive unit 20 may be provided to each IGBT T through a corresponding pair of drive leads i . However, it is also conceivable that the synchronously switchable power semiconductor switches are unipolar insulated gate field effect transistors (MOS-FETs). according to figure 2 , each pair of drive leads included at node A i with auxiliary emitter terminal H i provided between the first drive lead and located at node B i with gate terminal G i provided between the second drive leads. In accordance with the present invention, a corresponding common-mode reduction inductor D is provided between each pair of first and second conductive connections (pairs of drive leads). i ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an electronic circuit comprising: a control unit (20) generating at least one control signal; and two or more power semiconductor switches (T1, T2, T3), each having a first and a second main connection . The first and second main connections of the power semiconductor switches (T1, T2, T3) are electrically connected in parallel with each other. A first and a second conductive connection for connection to said control unit (20) is provided for each power semiconductor switch (T1, T2, T3). The object of the invention is to achieve an equal dynamic distribution of current to the power semiconductor switches (T1, T2, T3). To this end, a first inductive resistor is provided in each first conductive connection and a second inductive resistor is provided in each second conductive connection, so that for each power semiconductor switch the first inductive resistor couples to the second sense resistor.

Description

technical field [0001] The present invention relates to the field of power electronics. The invention relates to an electronic circuit and a power semiconductor module according to the preambles of patent claims 1 and 6, respectively. Background technique [0002] In conventional power semiconductor modules, two or more power semiconductor switches, usually identical, are often connected in parallel to achieve the desired total current capacity. In this case, it must be ensured that the total current flowing through the semiconductor power module at any point in time is distributed as uniformly as possible between the individual power semiconductor switches in order to prevent exceeding the current capacity of the individual semiconductor switches. In particular, switching operations are critical in this case, since during these operations, feedback from the output side to the drive side of the power semiconductor switches can lead to uneven dynamic current distribution. R...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/16
CPCH03K17/127
Inventor 乌尔里克·施拉普巴克拉斐尔·施内尔
Owner HITACHI ENERGY LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com