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Method for obtaining a structure having a supporting substrate and an ultra-thin layer

A supporting substrate and thin-layer technology, applied in the direction of electrical components, electrical solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as no suggestions

Active Publication Date: 2006-07-12
SOITEC SA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] However, the purpose of this method is not to obtain ultra-thin layers, so the problem of blisters or defects during the transfer of ultra-thin layers to the support is completely ignored
[0022] Finally, this document does not at all suggest the use of an intermediate step of transferring a layer having a thickness substantially greater than that of the ultrathin layer to be obtained

Method used

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  • Method for obtaining a structure having a supporting substrate and an ultra-thin layer
  • Method for obtaining a structure having a supporting substrate and an ultra-thin layer
  • Method for obtaining a structure having a supporting substrate and an ultra-thin layer

Examples

Experimental program
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example 1

[0106] Thermal oxidation of the source substrate 1 formed of bulk silicon was carried out so as to use 50 nanometer (50 nm) thick silicon oxide (SiO 2 ) to insert layer 2 over it.

[0107] Then by using the 8×10 16 h + / cm 2 The implant dose and the implant energy of 210keV implant hydrogen ions H + Weak region 12 was formed to obtain layer 13 to be transferred having a thickness of 1.9 micrometers (1.9 μm).

[0108] A support substrate formed of bulk silicon is then bonded to said oxide layer 2 by wafer bonding.

[0109] The remaining part 14 of the source substrate 1 is then separated by a heat treatment below 500°C and the bonding interface is strengthened by a heat treatment above 1000°C.

[0110] Finally, thinning is performed by polishing and sacrificial oxidation to obtain the final structure 5' with an ultra-thin silicon layer 130 with a thickness of 50 nm or even 20 nm if the thinning step is continued.

example 2

[0112] The procedure of Example 1 was followed, except that the silicon oxide layer 2 was 20 nm thick.

example 3

[0114] Follow the procedure of Example 1, except that the injection dose is 7 x 10 16 H+ / cm 2 And the implant energy is 160keV, so that the layer 13 to be transferred is 1.5 microns (1.5 μm) thick.

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Abstract

The invention relates to a method for obtaining a structure having at least one supporting substrate (3), an ultra-thin layer produced from a source substrate (1), particularly made of semiconductor material and optionally having an inserted layer. The inventive method comprises the following steps: a) adhering, by molecular adhesion, a supporting substrate (3) to the front face (10) of a source substrate (1) that has a fragilization area (12) which delimits a useful layer (13) to be transferred whose width is distinctly larger than that of said ultra-thin layer (130); b) removing said supporting substrate (3) from the remainder (14) of the source substrate (1) along said fragilization area (12) whereby obtaining an intermediate structure having at least said transferred useful layer (13) and said supporting substrate (3); c) thinning this transferred useful layer (13) until obtaining the ultra-thin layer. The invention is for use in the manufacture of substrates in the fields of electronics, optoelectronics or optics.

Description

technical field [0001] The invention relates to a method for producing a structure comprising at least one support substrate and an ultrathin layer of material, especially semiconductor material, optionally with interposed layers between the support substrate and the ultrathin layer . Background technique [0002] During the production of composite substrates, especially in applications in the fields of optics, electronics or optoelectronics, layer transfer methods are used to transfer layers from a source substrate to a support substrate. [0003] One of the layer transfer methods consists in implanting atomic species below the surface of the source substrate to create therein a zone of weakness defining a thin layer. The free face of the thin layer is then brought into intimate contact with the support substrate, and the thin layer is then separated from the remainder of the source substrate in order to transfer it to the support substrate. [0004] This method is known ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/20
CPCH01L21/76259H01L21/76254H01L27/12
Inventor C·奥耐特B·巴塔尤B·吉斯勒H·莫里索
Owner SOITEC SA