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Hot-melt underfill composition and methos of coating

An underfill and hot-melt technology, which is applied in the direction of filling slurry, coating, epoxy resin coating, etc., can solve problems such as voids, difficult removal, device failure, etc.

Inactive Publication Date: 2006-07-26
NAT STARCH & CHEM INVESTMENT HLDG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this wafer-scale process has advantages over capillary and no-flow processes, it also has some disadvantages
If the conditions for B-staging are not optimized, residual solvents in the wafer-level underfill may outgas during reflow, preventing a good solder connection (resulting in cold solder joints), or causing voids, which may lead to device failure, or Causes areas not contacted by underfill (unwetted)
Furthermore, if the thickness of the underfill layer increases above 200 microns, it becomes very difficult to remove the solvent from the underfill

Method used

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  • Hot-melt underfill composition and methos of coating
  • Hot-melt underfill composition and methos of coating
  • Hot-melt underfill composition and methos of coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] The formulation of Example 1 was prepared using standard binder mixing techniques known to those skilled in the art and consisted of:

[0084] Epon 1001F bisphenol A / epichlorohydrin epoxy resin 47.6wt%

[0085] Amorphous silica filler 47.6wt%

[0086] Polysebacic acid polyanhydride 4.76wt%

Embodiment 2

[0088] The formulation of Example 2 was prepared using standard binder mixing techniques known to those skilled in the art and consisted of:

[0089] Epiclon HP-7200H epoxy resin 41.7wt%

[0090] Amorphous silica filler 41.7wt%

[0091] Dodecanedioic acid flux 10.0wt%

[0092] Epiclon 830S bisphenol F epoxy resin 4.17wt%

[0093] Hypox RM20 rubber modified epoxy resin 1.9wt%

[0094] HRJ 1166 phenolic phenolic resin 0.48wt%

[0095] Amino aromatic amide 0.11wt%

[0096] Each composition was printed separately onto a silicon wafer having bumps with a height of 450 microns and a pitch of 800 microns. An aluminum stencil slightly thicker than the bumped wafer is used for printing, allowing the material to completely cover the bumps. This ensures that the bumps are not damaged by the rubber roller during printing. Place the wafer in the template on the hot plate. Place excess solid underfill on the hot plate on the stencil and wafer side. The stencil, wafer and solid unde...

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Abstract

This invention provides a process for applying a wafer level underfill comprising: providing a solvent-free hot-melt underfill composition; melting the underfill; applying the underfill in a uniform layer to the active side of a semiconductor wafer; returning the underfill to a solid state; optionally B-staging the underfill; optionally removing any excess underfill from the bumps on the wafer; and dicing the wafer into individual dies.

Description

technical field [0001] The present invention relates to hot-melt solvent-free underfill compositions and methods of depositing underfills, particularly before silicon semiconductor wafers are diced into individual dies The method by which it is deposited on a silicon semiconductor wafer. Background technique [0002] In the construction of semiconductor assemblies, semiconductor dies or chips are either electronically or mechanically attached to substrates. In one method of attachment, the front side, or active face, of the die, containing the electrical lands and circuitry, is raised due to the deposited solder. These solder bumps are aligned and contacted with corresponding terminals on the substrate, and the solder is heated to its melting point or "reflow" temperature to form a solder joint, thereby establishing a mechanical bond between the semiconductor die and the substrate. Supports electrical interconnections. [0003] The difference in coefficient of thermal exp...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/56H01L21/78C09D163/00C09D5/34
Inventor R·R·查沃尔X·何D·什菲尔德
Owner NAT STARCH & CHEM INVESTMENT HLDG CORP
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