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CMOS image sensor and method for fabricating the same

An image sensor and image device technology, applied in the field of image sensors, can solve problems such as reducing the performance of CMOS image sensors

Inactive Publication Date: 2006-08-16
DONGBUANAM SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This degrades the performance of the CMOS image sensor

Method used

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  • CMOS image sensor and method for fabricating the same
  • CMOS image sensor and method for fabricating the same
  • CMOS image sensor and method for fabricating the same

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Embodiment Construction

[0020] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, like reference numbers will be used throughout the drawings to refer to the same or like parts.

[0021] Figures 2A-2D are sequential process steps respectively illustrating a method for manufacturing a CMOS image sensor according to an embodiment of the present invention.

[0022] refer to Figure 2A , an interlayer dielectric layer 32 is formed on the entire surface of a semiconductor substrate (not shown), in which a plurality of photodiodes 31 are formed so as to generate charges in response to incident light. A grating type device may be used as the light sensing device. The interlayer dielectric layer 32 may be formed of one or several layers. For example, a light shielding layer (not shown) may be formed on one interlayer dielectric layer to prevent light from entering a portion other than the photo...

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Abstract

A CMOS image sensor and a method for fabricating the same provides a microlens pattern profile with a rectangular shape to facilitate a reflow process of a microlens and improve its curvature, thereby improving concentration efficiency of light and improving characteristics of the image sensor. The CMOS image sensor includes a plurality of photodiodes arranged on a semiconductor substrate; a plurality of color filters disposed in correspondence to the photodiodes; a planarization layer formed on the entire surface of the semiconductor substrate including the color filters; first microlenses having a rectangular shape formed on the planarization layer to correspond to the photodiodes; and second microlenses formed to surround the first microlenses.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2004-0116547 filed on December 30, 2004, which is incorporated by reference into this application as if fully set forth herein for any purpose. technical field [0003] The present invention relates to an image sensor, and more particularly, to a Complementary Metal Oxide Semiconductor (CMOS) image sensor and a method of manufacturing the same, in which light concentration efficiency is maximized to improve characteristics of the image sensor. Background technique [0004] An image sensor is a semiconductor device used to convert an optical image into an electrical signal. It includes a CMOS image sensor having a number of Metal Oxide Semiconductor (MOS) transistors corresponding to the number of pixels, integrated on a single chip with peripheral circuits for sequentially outputting electrical signals of the MOS transistors. CMOS image sensors us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14621H01L27/14685H01L27/14627H01L27/14643H01L27/146H01L31/10
Inventor 白承源
Owner DONGBUANAM SEMICON