Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of small reliability reduction and reliability reduction, achieve the effect of simple manufacturing process and ensure reliability

Inactive Publication Date: 2006-08-23
NEC ELECTRONICS CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In a semiconductor device as described in Japanese Patent Laid-Open No. H06-140,409, since aluminum interconnects used for interconnections of conventional semiconductor devices have solderability problems, in order to ensure solderability and provide less reliability Reduced reliability, providing additional metal layers on aluminum interconnects, where this reduced reliability is caused by backdiffusion of aluminum electrodes or solder of semiconductor devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The invention will now be described herein with reference to illustrative embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments shown for explanatory purposes.

[0018] Preferred embodiments according to the present invention will be described in further detail below with reference to the accompanying drawings. In all the drawings, the same reference numerals are assigned to elements commonly appearing in the drawings, and a detailed description thereof will not be provided.

[0019] figure 1 The illustrated semiconductor device 100 includes: a semiconductor substrate (silicon substrate 110) including a device region (source region 107); an interconnect (gate interconnect 105) forming a predetermined pattern on the surface of the semiconductor substrate; An insulating film (insulating film 108) provided for interco...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A structure of a semiconductor device provided with a surface electrode can be simplified. Cu, which is a solderable metal, is employed for the gate electrode 101 and the source electrode 104 in a semiconductor device 100 . Therefore, unlike as in the conventional technology, it is not necessary to separately form an additional solderable metal layer on the upper portions of the gate electrode and the source electrode.

Description

[0001] This application is based on Japanese Patent Application No. 2005-36,697, the contents of which are incorporated herein by reference. technical field [0002] The invention relates to a semiconductor device comprising a surface electrode. Background technique [0003] In conventional technology, when the surface electrode of a semiconductor device is connected to an external terminal with solder, it is necessary to form a barrier metal consisting of two or three layers on the aluminum electrode by photolithography in order to obtain adhesion to the solder and gain reliability, thus raising issues related to production costs. [0004] Therefore, the electroless plating process is used to form a metal with good adhesion to the aluminum electrode, such as zinc, titanium, chromium, palladium, etc., and then nickel (Ni) or copper (Cu) is formed on it as a solder barrier , in addition, by an electroless plating process, a metal for preventing the oxidation of Ni and Cu, su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L23/482
CPCH01L29/456H01L2924/0105H01L2924/00014H01L24/39H01L2924/13091H01L2924/01022H01L2224/0401H01L2924/01028H01L2224/48091H01L23/4827H01L2924/01013H01L24/40H01L24/49H01L2224/32225H01L2924/0103H01L24/48H01L24/06H01L2224/49051H01L2224/45099H01L29/4925H01L24/34H01L2924/01033H01L2924/01074H01L2924/01078H01L2224/48471H01L2924/01073H01L2224/85444H01L2924/01015H01L2224/0603H01L2924/01046H01L2924/01082H01L2924/01004H01L24/73H01L2924/01029H01L2924/01027H01L2924/014H01L2924/01024H01L2924/01047H01L2924/01079H01L2224/73221H01L2224/48227H01L2224/05647H01L2224/4903H01L2924/01006H01L29/7802H01L24/91H01L2924/01014H01L2924/01042H01L2224/73265H01L2924/1306H01L2224/40095H01L2224/40225H01L2224/04042H01L2224/84801H01L2224/37147H01L24/37H01L24/84H01L2924/00H01L2924/00012
Inventor 高津纪男
Owner NEC ELECTRONICS CORP