Plasma etching device exhaustring

A plasma and etching device technology, which is applied in the manufacturing of plasma, electrical components, semiconductor/solid-state devices, etc., can solve the problems of affecting the process window, reducing the gas conduction efficiency, etc., and achieve the effect of increasing the grounding area

Active Publication Date: 2006-10-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

The feature of this design is to use through holes or tapered round holes to achieve plasma shielding, but because some o

Method used

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  • Plasma etching device exhaustring
  • Plasma etching device exhaustring
  • Plasma etching device exhaustring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The exhaust ring structure of this embodiment is as follows Figure 7 , 8 shown. in, Figure 7 is a top view of the exhaust ring of the present embodiment, Figure 8 It is a vertical section along the A-A line. The upper part of the funnel-shaped hole is cone-shaped, and its cone angle is in the range of 10° to 45°, which is 3° in this embodiment. The lower part of the funnel-shaped hole is cylindrical, and the inner diameter of the cylinder should be smaller than the thickness of the plasma sheath, which is usually about 1-2mm. On the upper surface of the exhaust ring, that is, on the side surface 15 in contact with the plasma, there is an insulating coating sprayed Y 2 o 3 The material has a thickness of 50-150 μm, which is 100 μm in this embodiment. due to Y 2 o 3 The corrosion resistance is high, therefore, during the implementation of the etching process, damage can be reduced, pollution can be reduced, and the yield rate can be improved.

[0036] The exh...

Embodiment 2

[0038] The exhaust ring structure of this embodiment is as follows Figure 9 shown. in, Figure 9 It is a perspective view of the exhaust ring of this embodiment. It can be seen that the holes on the exhaust ring are elongated. The upper taper angle of the funnel-shaped hole of the hole is 40°. On the plasma space side surface of the exhaust ring, there is an insulating coating sprayed with Al 2 o 3 material with a thickness of 150 μm. Thanks Al 2 o 3 The corrosion resistance is high, therefore, during the implementation of the etching process, damage can be reduced, pollution can be reduced, and the yield rate can be improved.

[0039] According to the present invention, by adopting the funnel-shaped exhaust ring structure, plasma leakage can be suppressed, the grounding area can be increased, and abnormal plasma discharge can be suppressed. 2 o 3 or Al 2 o 3 Spraying can reduce exhaust ring damage, reduce metal particle pollution, and improve yield.

Embodiment 3

[0041] The exhaust ring structure of this embodiment is as follows Figure 9 As shown, the holes on the exhaust ring are elongated. In this embodiment, the upper taper angle of the funnel-shaped hole of the hole is 5.5°. On the surface of the plasma space side of the exhaust ring, there is an insulating coating sprayed Y 2 o 3 material with a thickness of 50 μm. due to Y 2 o 3 The corrosion resistance is high, therefore, during the implementation of the etching process, damage can be reduced, pollution can be reduced, and the yield rate can be improved.

[0042] According to the present invention, by adopting the funnel-shaped exhaust ring structure, plasma leakage can be suppressed, the grounding area can be increased, and abnormal plasma discharge can be suppressed. 2 o 3 or Al 2 o 3 Spraying can reduce exhaust ring damage, reduce metal particle pollution, and improve yield.

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Abstract

This invention puts forward an air vent ring of an etching device of plasmas, in which, the ring includes a through hole and the best selection of the shape of the section is a filter. Advantage: it is favorable to the conduction of the reacting gas due to the through hole on the ring, at the same time, since the section is a filter, the earth area is increased and plasmas are limited in a region.

Description

technical field [0001] The invention relates to a plasma etching device, in particular to an exhaust ring of a plasma etching device with controllable reaction gas temperature. Background technique [0002] Plasma etching equipment is used to process and manufacture microelectronic chips, and then form microelectronic circuits. This production process is called dry etching. Generally speaking, dry etching needs to form plasma in the reaction chamber, so it is necessary to apply radio frequency to the upper dielectric window of the reaction chamber, so that the process gas entering the reaction chamber is excited into plasma, and then the microelectronic chip processing is carried out. Since the material of the reaction chamber is generally aluminum, although the surface of the reaction chamber has been treated (generally anodized), it will still react with the reactive gas plasma, resulting in damage to equipment parts or deposition of polymers. Therefore, it is necessary t...

Claims

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Application Information

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IPC IPC(8): H01L21/00C23F4/00H01J37/32H01L21/3065H01L21/67H05H1/00
Inventor 赵梦欣
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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