Plasma etching device exhaustring

Abstract

This invention puts forward an air vent ring of an etching device of plasmas, in which, the ring includes a through hole and the best selection of the shape of the section is a filter. Advantage: it is favorable to the conduction of the reacting gas due to the through hole on the ring, at the same time, since the section is a filter, the earth area is increased and plasmas are limited in a region.

Description

technical field

[0001] The invention relates to a plasma etching device, in particular to an exhaust ring of a plasma etching device with controllable reaction gas temperature. Background technique

[0002] Plasma etching equipment is used to process and manufacture microelectronic chips, and then form microelectronic circuits. This production process is called dry etching. Generally speaking, dry etching needs to form plasma in the reaction chamber, so it is necessary to apply radio frequency to the upper dielectric window of the reaction chamber, so that the process gas entering the reaction chamber is excited into plasma, and then the microelectronic chip processing is carried out. Since the material of the reaction chamber is generally aluminum, although the surface of the reaction chamber has been treated (generally anodized), it will still react with the reactive gas plasma, resulting in damage to equipment parts or deposition of polymers. Therefore, it is necessary t...

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