Sapphire lining material polishing liquid and its preparing method

一种蓝宝石衬底、抛光液的技术，应用在清洗方法、抛光组合物、化学仪器和方法等方向，能够解决衬底片表面去除速率低、粗糙度高、易蹋边等问题，达到提高质量传输速率、分散度好、减小损伤层的效果

Inactive Publication Date: 2006-11-08
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims to solve the problems of low substrate surface removal rate, high roughness, easy scratching, and easy edge removal of the known sapphire substrate material polishing solution in the polishing process, and discloses a chemically effective and fast removal rate. , low surface roughness, no scratches, and low cost sapphire substrate material polishing fluid

Method used

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Examples

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Effect test

Embodiment 1

[0033] Describe the preparation process of the present invention with embodiment 1:

[0034] Take 50% SiO with a particle size of 30-40nm 2 Sol 40g, put in 3000g deionized water while stirring, then weigh 40g KOH and dilute with 200g deionized water, pour in the above liquid while stirring. Then respectively take 520g tetrakis(tetrahydroxyethylethylenediamine) EDTA and 400g FA / O active agent and pour them into the liquid while stirring. Stir evenly to obtain a sapphire substrate polishing solution.

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PUM

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Abstract

The present invention relates to a kind of chemical and mechanical polishing liquid for the high precision processing of polishing sapphire substrate and its preparing method. The polishing liquid consists of nanometer silica sol 1-90 wt%, alkaline regulator 0.25-5 wt%, ether-alcohol activator 0.5-10 wt%, chelating agent 1.25-15 wt% and deionized water for the rest. The compounding process of the polishing liquid includes diluting silica sol with deionized water in different quantity, regulating pH value with alkaline regulator and adding ether-alcohol activator while stirring. It is used in polishing sapphire substrate in certain technological conditions to realize high precision processing. The present invention has the advantages of low cost, low roughness, high polishing rate, no environmental pollution and no corrosion to apparatus.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing, in particular to a polishing liquid used for sapphire substrate materials and a preparation method thereof. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance The hardness is second only to diamond, with a Ta Mok's grade of 9, and it still has good stability at high temperatures, with a melting point of 2030°C, so it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-state lasers, infrared windows, substrates for semiconductor c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18
CPCC11D1/72C11D3/30H01L21/02052C11D2111/46C11D2111/22
Inventor 刘玉岭牛新环
Owner HEBEI UNIV OF TECH
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