Buffing slurry

Abstract

The invention discloses polishing slurry, which comprises the following parts: grinding particle, carrier and double-functional group agent. The invention reduces the density of grinding particle in the polishing slurry, which decreases the constructing pressure and guarantees the expecting grinding velocity.

Description

polishing slurry technical field The invention relates to a polishing slurry. Background technique With the development of microelectronics technology, the integration level of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires nearly a hundred processes in the microelectronics process, especially multi-layer wiring, lining The bottom and medium must be chemically mechanically globally planarized, and chemical mechanical polishing (CMP) has been proven to be the best planarization method. In a typical chemical mechanical polishing process, the substrate is placed in direct contact with a rotating polishing pad and a load is used to exert pressure on the backside of the substrate. During polishing, the pad and table rotate while maintaining a downward force on the back of the substrate, coating the pad with an abrasive and a chemically active solution (commonly called a slurry)...

AI Technical Summary

Problems solved by technology

Because most materials with low dielectric constant k are extremely brittle